TPV597 POWER TRANSISTOR Datasheet

TPV597 Datasheet, PDF, Equivalent


Part Number

TPV597

Description

UHF LINEAR POWER TRANSISTOR

Manufacture

Motorola Inc

Total Page 4 Pages
Datasheet
Download TPV597 Datasheet


TPV597
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
UHF Linear Power Transistor
. . . designed for 1.0 watt stages in Band V TV transposer amplifiers. Gold
metallized dice and diffused emitter ballast resistors are used to enhance
reliability, ruggedness and linearity.
Band IV and V (470– 860 MHz)
1.0 W — Pref @ – 58 dB IMD
20 V — VCC
High Gain — 11 dB Typ, Class A @ f = 860 MHz
Gold Metallization for Reliability
Order this document
by TPV597/D
TPV597
1.0 W, 470 – 860 MHz
UHF LINEAR
POWER TRANSISTOR
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Symbol
VCEO
VCBO
VEBO
IC
PD
Value
24
45
3.5
1.4
19
0.11
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
Operating Junction Temperature
Storage Temperature Range
TJ 200 °C
Tstg – 65 to + 200 °C
CASE 244–04, STYLE 1
(.280 SOE)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
RθJC
Max
9.0
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 40 mA, IB = 0)
Collector–Base Breakdown Voltage (IC = 2.0 mA, IE = 0)
Emitter–Base Breakdown Voltage (IE = 4.0 mA, IC = 0)
Emitter–Base Leakage Current (VEB = 2.0 V)
Collector–Emitter Breakdown Voltage (IC = 40 mA, RBE = 10 )
Collector Cutoff Current (VCB = 30 V, IE = 0)
ON CHARACTERISTICS
DC Current Gain (IC = 200 mA, VCE = 5.0 V)
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 28 V, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCE = 20 V, Pout = 1.0 W, f = 860 MHz, IE = 0.44 A)
Load Mismatch
(VCE = 20 V, Pout = 2.0 W, IE = 0.44 A, f = 860 MHz,
Load VSWR = :1, All Phase Angles)
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IEBO
V(BR)CER
ICBO
hFE
Cob
GPE
ψ
Min Typ Max Unit
24 — — Vdc
45 — — Vdc
3.5 —
— Vdc
— — 0.5 mA
50 — — Vdc
— — 1.2 mAdc
15 — 120 —
— — 7.0 pF
10.5 11 — dB
No Degradation in Output Power
(continued)
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
TPV597
1

TPV597
ELECTRICAL CHARACTERISTICS — continued
Characteristic
FUNCTIONAL TESTS (continued)
Intermodulation Distortion, 3 Tone
(f = 860 MHz, VCE = 20 V, IE = 0.44 A, Pref = 1.0 W,
Vision Carrier = – 8.0 dB, Sound Carrier = –7.0 dB,
Sideband Signal = –16 dB, Specification TV05001)
Cutoff Frequency (VCE = 20 V, IE = 0.44 A)
Intermodulation Distortion (IDEM)
(f = 860 MHz, VCE = 20 V, IE = 0.44 A, Pref = 2.0 W,
Vision Carrier = – 8.0 dB, Sound Carrier = –10 dB,
Sideband Signal = –16 dB)
Symbol
IMD1
Min
Typ Max
– 60 – 58
Unit
dB
fτ
2.2 2.5
— GHz
IMD2
— –ā51 dB
6
f = 860 MHz
5 VCE = 20 V
IC = 440 mA
4
3
2
IDEAL
REAL
0.6
0.8
1
0.4
ZOL*
0
0.2 0.5 0.8
0.1
Zin
0.2
f = 1 GHz
0.9
0.8 0.4
0.7
0.6
0.6
0.8
0.5
1
0.2
f = 1 GHz
Zo = 50
0.4
0.6
0.8
1
1
40 80 120 160 200 240 280 320
Pin, INPUT POWER (mW)
1.5
2
1.5
2
1.5
3
4
52
Figure 1. Power Output versus Power Input
3
45
10
10
0 10
3
54
Figure 2. Large Signal Impedances
VCE = 20 V — IC = 440 mA
ZOL* = Conjugate of the optimum load impedance into which the
device output operates at a given output power, voltage and
frequency.
21
1.6
THEATSINK = 70°C
0.1
1.2
NOTE: DIVIDE MTTF FACTORY BY IC2
TO OBTAIN METAL LIFE
0.8
0.01
0.4
0.001
0 5 10 15 20 25 30
80 100 120 140 160 180 200
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Safe Operating Area
Figure 4. MTTF Factor versus Junction
Temperature
TPV597
2
MOTOROLA RF DEVICE DATA


Features MOTOROLA The RF Line SEMICONDUCTOR TECH NICAL DATA Order this document by TPV5 97/D UHF Linear Power Transistor . . . designed for 1.0 watt stages in Band V TV transposer amplifiers. Gold metalli zed dice and diffused emitter ballast r esistors are used to enhance reliabilit y, ruggedness and linearity. • Band I V and V (470– 860 MHz) • 1.0 W — Pref @ – 58 dB IMD • 20 V — VCC High Gain — 11 dB Typ, Class A @ f = 860 MHz • Gold Metallization for R eliability TPV597 1.0 W, 470 – 860 M Hz UHF LINEAR POWER TRANSISTOR MAXIMUM RATINGS Rating Collector–Emitter Vol tage Collector–Base Voltage Emitter Base Voltage Collector Current — Con tinuous Total Device Dissipation @ TC = 25°C Derate above 25°C Operating Jun ction Temperature Storage Temperature R ange Symbol VCEO VCBO VEBO IC PD TJ Tst g Value 24 45 3.5 1.4 19 0.11 200 – 6 5 to + 200 Unit Vdc Vdc Vdc Adc Watts W /°C °C °C CASE 244–04, STYLE 1 (.2 80 SOE) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 9.
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