TPV8100B POWER TRANSISTOR Datasheet

TPV8100B Datasheet, PDF, Equivalent


Part Number

TPV8100B

Description

NPN SILICON RF POWER TRANSISTOR

Manufacture

Advanced Semiconductor

Total Page 1 Pages
Datasheet
Download TPV8100B Datasheet


TPV8100B
TTPPVV88110000BB
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TPV8100B is Designed for
Transmitter Output Stages Covering
TV Band IV and V, Operating at 28 V.
FEATURES INCLUDE:
Internal Input, Output Matching
Common Emitter Configuration
Gold Metalization
Emitter Ballasting
MAXIMUM RATINGS
IC 12 A
VCER
PDISS
TJ
TSTG
θJC
40 V RBE = 10
215 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
0.8 OC/W
PACKAGE STYLE .438X.450 4LFL
1 = COLLECTOR #1 2 = COLLECTOR
#2
3 = BASE #1 4 = BASE #2
5 = EMITTER CASE (COMMON)
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCER
IC = 10 mA
RBE = 75
BVCBO
IC = 20 mA
BVEBO
IE = 10 mA
ICER
VCE = 28 V
RBE = 75
hFE VCE = 10 V IC = 2.0 A
Gp VCE = 28 V Icq = 2X50 mA
η VCE = 28 V Icq = 2X50 mA
f = 860 MHz
f = 860 MHz
Pout
VCE = 28 V Icq = 2X50 mA
1.0 dB COMPRESSION (ref = 25 W)
f = 860 MHz
FUNCTIONAL TESTS IN VIDEO (STANDARD BLACK LEVEL)
Pout VCE = 28 V Icq = 2X50 mA
Pout VCE = 32 V Icq = 2X25 mA
f = 860 MHz
f = 860 MHz
MINIMUM TYPICAL MAXIMUM
30
65
4.0
10
30 120
8.5
55
100
125
150
UNITS
V
V
V
mA
---
dB
%
W
W
W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1


Features TPV8100B TPV8100B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV8100 B is Designed for Transmitter Output St ages Covering TV Band IV and V, Operati ng at 28 V. FEATURES INCLUDE: • Inte rnal Input, Output Matching • Common Emitter Configuration • Gold Metaliza tion • Emitter Ballasting PACKAGE ST YLE .438X.450 4LFL MAXIMUM RATINGS IC VCER PDISS TJ TSTG θJC 12 A 40 V RBE = 10 Ω 215 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.8 C/W O O O O O O 1 = COLLECTOR #1 2 = COLLECTOR #2 3 = BASE #1 4 = BASE #2 5 = EMITTER CASE (C OMMON) CHARACTERISTICS SYMBOL BVCER BV CBO BVEBO ICER hFE Gp η Pout IC = 10 m A IC = 20 mA IE = 10 mA VCE = 28 V VCE = 10 V VCE = 28 V VCE = 28 V TC = 25 C O TEST CONDITIONS RBE = 75 Ω MINI MUM TYPICAL MAXIMUM 30 65 4.0 UNITS V V V RBE = 75 Ω IC = 2.0 A Icq = 2X50 mA Icq = 2X50 mA f = 860 MHz f = 860 M Hz f = 860 MHz 30 8.5 55 100 10 120 m A --dB % W Icq = 2X50 mA VCE = 28 V 1. 0 dB COMPRESSION (ref = 25 W) VCE = 28 V VCE = 32 V Icq = 2X50 mA Icq = 2X25 mA.
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