TPV8200B NPN SILICON Datasheet

TPV8200B Datasheet, PDF, Equivalent


Part Number

TPV8200B

Description

RF POWER TRANSISTOR NPN SILICON

Manufacture

Motorola Inc

Total Page 8 Pages
Datasheet
Download TPV8200B Datasheet


TPV8200B
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
The TPV8200B is designed for output stages in band IV and V TV transmitter
amplifiers. It incorporates high value emitter ballast resistors, gold metalliza-
tions and offers a high degree of reliability and ruggedness.
Including input and output matching networks, the TPV8200B features high
impedances. It can operate over the 470 MHz to 860 MHz bandwidth using a
single fixed tuned circuit.
To be used class AB for TV band IV and V.
Specified 28 Volts, 860 MHz Characteristics
Output Power = 190 Watts (peak sync.)
Output Power = 150 Watts (CW)
Gain = 8 dB Min
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Order this document
by TPV8200B/D
TPV8200B
Motorola Preferred Device
190 W, 470 – 860 MHz
RF POWER TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Quiescent Current (without RF drive)
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
V(BR)CEO
Collector–Base Breakdown Voltage
(IC = 20 mAdc, IE = 0)
V(BR)CBO
Emitter–Base Breakdown Voltage (IE = 20 mAdc, IC = 0)
Collector–Emitter Leakage Current (VCE = 28 Vdc, RBE = 75 )
V(BR)EBO
ICER
NOTE:
1. Thermal resistance is determined under specific RF condition.
Teflon is a registered trademark of du Pont de Nemours & Co., Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
Symbol
VCEO
VCBO
VEBO
IC
PD
ICQ
Tstg
Symbol
RθJC
Min
30
65
4
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
CASE 375A–01, STYLE 1
Value
30
65
4
20
250
1.43
2 x 500
– 65 to +150
Max
0.7
Typ Max
35 —
80 —
5—
— 15
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
mAdc
°C
Unit
°C/W
Unit
Vdc
Vdc
Vdc
mAdc
(continued)
TPV8200B
1

TPV8200B
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
ON CHARACTERISTICS
DC Current Gain (ICE = 2 Adc, VCE = 10 Vdc)
DYNAMIC CHARACTERISTICS
hFE 30 75 120 —
Output Capacitance (each side) (2)
(VCB = 28 Vdc, IE = 0, f = 1 MHz)
FUNCTIONAL TESTS IN CW
Common–Emitter Amplifier Power Gain
(VCE = 28 Vdc, Pout = 150 W, ICQ = 2 x 75 mA, f = 860 MHz)
Collector Efficiency
(VCE = 28 Vdc, Pout = 150 W, ICQ = 2 x 75 mA, f = 860 MHz)
Output Power @ 1 dB Compression (Pref = 40 W)
(VCE = 28 Vdc, ICQ = 2 x 75 mA, f = 860 MHz)
Input overdrive: no degradation
(VCE = 28 Vdc, ICQ = 2 x 75 mA, f = 860 MHz)
Output Mismatch Stress:
(VCE = 28 Vdc, Pout = 120 W, ICQ = 2 x 75 mA, f = 860 MHz,
Load VSWR = 3:1, all phase angles at frequency of test)
Cob
Gpe
η
Pout
Pin
ψ
— 76 — pF
8 9.5 — dB
45 53 — %
150 165
W
30 — — W
No Degradation in Output Power
Before or After Test
FUNCTIONAL TESTS IN VIDEO (Standard Black Level)
Peak Output Power @ 1 dB Compression
(VCE = 28 Vdc, ICQ = 2 x 75 mA, f = 860 MHz)
Pout 190 210
NOTE:
2. Value of “Cob” is that of die only. It is not measurable in TPV8200B because of internal matching network.
W
VCC
T1
C8
C6
R2
INPUT
C1
C6
L1
R2
R1
R4
R3
C10
P1
T2
D.U.T.
R5
C11
C3
C2 C4
C3
C9
C7
C5
L2 OUTPUT
C7
C1 — Chip Capacitor 47 pF ATC 100A
C2 — Chip Capacitor 12 pF ATC 100B
C2 — + Trimmer Capacitor 0.5– 4 pF
C3 — Chip Capacitor 8.2 pF ATC 100B
C4 — Chip Capacitor 12 pF ATC 100B
C5 — Chip Capacitor 100 pF ATC 100A
C6 — Chip Capacitor 2 x 1000 pF Vitramon
C7 — Chip Capacitor 2 x 0.1 µF Vitramon
C8 — Capacitor 220 µF/16 V
C9 — Capacitor 100 µF/40 V
C10 — Chip Capacitor 100 pF Vitramon
C11 — Chip Capacitor 15 nF Vitramon
L1 — Coaxial 25 Ω / length = 41 mm
L2 — Coaxial 25 Ω / length = 41 mm
R1 — Chip Resistor 47
R2 — 2 x 1 (0.5 )
Figure 1. 860 MHz Test Circuit
R3 — Resistor 0.8
R4 — Resistor 47
R5 — Resistor 1.2 k
P1 — Trimmer Resistor 5 k
T1 — Transistor BD 135
T2 — Transistor BD 135
PC Board: 1/50Glass Teflon® ∈r = 2.55
TPV8200B
2
MOTOROLA RF DEVICE DATA


Features MOTOROLA The RF Line SEMICONDUCTOR TECH NICAL DATA Order this document by TPV8 200B/D NPN Silicon RF Power Transistor The TPV8200B is designed for output st ages in band IV and V TV transmitter am plifiers. It incorporates high value em itter ballast resistors, gold metalliza tions and offers a high degree of relia bility and ruggedness. Including input and output matching networks, the TPV82 00B features high impedances. It can op erate over the 470 MHz to 860 MHz bandw idth using a single fixed tuned circuit . • To be used class AB for TV band I V and V. • Specified 28 Volts, 860 MH z Characteristics Output Power = 190 Wa tts (peak sync.) Output Power = 150 Wat ts (CW) Gain = 8 dB Min • Circuit boa rd photomaster available upon request b y contacting RF Tactical Marketing in P hoenix, AZ. TPV8200B Motorola Preferre d Device 190 W, 470 – 860 MHz RF POW ER TRANSISTOR NPN SILICON CASE 375A– 01, STYLE 1 MAXIMUM RATINGS Rating Col lector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collec.
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