TS112N Telecom Switch Datasheet

TS112N Datasheet, PDF, Equivalent


Part Number

TS112N

Description

Multifunction Telecom Switch

Manufacture

Clare Inc.

Total Page 7 Pages
Datasheet
Download TS112N Datasheet


TS112N
TS112N
Multifunction Telecom Switch
Load Voltage
Load Current
Max RON
TS112N
350
120
20
Units
V
mA
Features
Small 8 Pin SOIC Narrow Package
Low Drive Power Requirements (TTL/CMOS
Compatible)
No Moving Parts
High Reliability
Arc-Free With No Snubbing Circuits
1500VRMS Input/Output Isolation
FCC Compatible
VDE Compatible
No EMI/RFI Generation
Machine Insertable, Wave Solderable
Tape & Reel Version Available
Description
The TS112 Multifunction Telecom switch combines a
350V Form A relay and an optocoupler in a single pack-
age. The relay uses optically coupled MOSFET technolo-
gy to provide 1500V of input to output isolation. The
efficient MOSFET switch and photovoltaic die use Clare’s
patented OptoMOS architecture. The optically coupled
input uses highly efficient GaAIAs infrared LEDs. TS112N
allows telecom circuit designers to combine two discrete
functions, such as hook switch and ring detect, in a single
component. The TS112’s small package uses less space
than traditional discrete component solutions.
Approvals
UL Recognized: File Number Pending
CSA Certified: File Number Pending
BSI Certified: Pending
Applications
Telecommunications
Telecom Switching
Tip/Ring Circuits
Modem Switching (Laptop, Notebook, Pocket Size)
Hookswitch
Dial Pulsing
Ground Start
Ringer Injection
Instrumentation
Multiplexers
Data Acquisition
Electronic Switching
I/O Subsystems
Meters (Watt-Hour, Water, Gas)
Medical Equipment-Patient/Equipment Isolation
Security
Aerospace
Industrial Controls
Ordering Information
Part #
TS112N
TS112NTR
Description
8 Pin SOIC (50/Tube)
8 Pin SOIC Tape & Reel (1000/Reel)
Pin Configuration
TS112 Pinout
1
+ LED - Relay
2
LED - Relay
3
Collector - Phototransistor
4
Emitter - Phototransistor
8
Load - Relay (MOSFET Output)
7
Load - Relay (MOSFET Output)
6
LED - Phototransistor /+
5
LED - Phototransistor +/
DS-TS112N-R2
www.clare.com
1

TS112N
TS112N
Absolute Maximum Ratings (@ 25˚ C)
Parameter
Input Power Dissipation
Input Control Current
Peak (10ms)
Reverse Input Voltage
Total Power Dissipation
Isolation Voltage
Input to Output
Operational Temperature
Storage Temperature
Soldering Temperature
(10 Seconds Max.)
1 Derate Linearly 1.33 mw/˚C
2 Derate Linearly 6.67 mw/˚C
Min Typ Max Units
- - 1501 mW
- - 100 mA
- -1 A
- -5 V
- - 8002 mW
1500
-40
-40
- - VRMS
- +85 °C
- +125 °C
+220 °C
Absolute Maximum Ratings are stress ratings. Stresses
in excess of these ratings can cause permanent damage
to the device. Functional operation of the device at these
or any other conditions beyond those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to the absolute maximum ratings
for an extended period may degrade the device and effect
its reliability.
Electrical Characteristics
Parameter
Relay Portion (Pins 7, 8)
Output Characteristics @ 25°C
Load Voltage (Peak)
Load Current (Continuous)
Peak Load Current
On-Resistance
Off-State Leakage Current
Switching Speeds
Turn-On
Turn-Off
Output Capacitance
Load Current Limit
Relay Portion (Pins 1, 2)
Input Characteristics @ 25°C
Input Control Current
Input Dropout Current
Input Voltage Drop
Reverse Input Voltage
Reverse Input Current
Detector Portion (Pins 3, 4)
Output Characteristics @ 25°C
Phototransistor Blocking Voltage
Phototransistor Output Current
Saturation Voltage
Current Transfer Ratio
Conditions
-
-
10ms
IL=120mA
VL=350V
IF=5mA, VL=10V
IF=5mA, VL=10V
50V; f=1MHz
IL=120mA
-
IF=5mA
-
VR
IC=10µA
VCE=5V, IF=0mA
IC=2mA, IF=16mA
IF=6mA, VCE=0.5V
Symbol
VL
IL
ILPK
RON
ILEAK
TON
TOFF
COUT
ICL
IF
IF
VF
VR
IR
BVCEO
ICEO
VSAT
CTR
Min
-
-
-
-
-
-
-
-
-
2
0.4
0.9
-
-
20
-
-
33
Typ
-
-
-
15
-
-
-
25
-
-
0.7
1.2
-
-
50
50
0.3
100
Max Units
350 V
120 mA
350 mA
20
1 µA
3 ms
3 ms
- pF
- mA
50 mA
- mA
1.4 V
5V
10 µA
-V
500 nA
0.5 V
-%
2 www.clare.com
Rev. 2


Features TS112N Multifunction Telecom Switch Loa d Voltage Load Current Max RON TS112N 350 120 20 Units V mA Ω Features Small 8 Pin SOIC Narrow Package • L ow Drive Power Requirements (TTL/CMOS C ompatible) • No Moving Parts • High Reliability • Arc-Free With No Snubb ing Circuits • 1500VRMS Input/Output Isolation • FCC Compatible • VDE Co mpatible • No EMI/RFI Generation • Machine Insertable, Wave Solderable • Tape & Reel Version Available Descrip tion The TS112 Multifunction Telecom sw itch combines a 350V Form A relay and a n optocoupler in a single package. The relay uses optically coupled MOSFET tec hnology to provide 1500V of input to ou tput isolation. The efficient MOSFET sw itch and photovoltaic die use Clare’s patented OptoMOS architecture. The opt ically coupled input uses highly effici ent GaAIAs infrared LEDs. TS112N allows telecom circuit designers to combine t wo discrete functions, such as hook swi tch and ring detect, in a single component. The TS112’s small package uses less space tha.
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