Condenser Microphone. TS788 Datasheet


TS788 Microphone. Datasheet pdf. Equivalent


Part Number

TS788

Description

N- channel Junction FET Electret Condenser Microphone

Manufacture

Sanyo Semicon Device

Total Page 1 Pages
Datasheet
Download TS788 Datasheet


TS788
TS788
N- channel Junction FET
Electret Condenser Microphone
Features
Especially suited for use in electret condenser microphone.
TS788 is possible to make applied sets smaller and Slimmer.
Excellent voltage characteristics.
Excellent transient characteristics.
Adoption of FBET process.
Absolute Maximum Ratings / Ta=25°C
Gate to Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
VGDO
IG
ID
PD
Tj
Tstg
TENTATIVE
--20
10
1
100
150
--55to+150
unit
V
mA
mA
mW
°C
°C
Electrical Characteristics / Ta=25°C
G-D Breakdown Voltage
V( BR)GDO IG =--100µA
Cutoff Voltage
VGS(off) VDS=5V, ID=1µA
Drain Current
IDSS
VDS=5V, VGS=0
Forward Transfer Admittance
| Yfs |
VDS=5V, VGS=0, f=1kHz
Input Capacitance
Ciss VDS=5V, VGS=0, f=1MHz
Reverce Transfer Capacitance
Crss
VDS=5V, VGS=0, f=1MHz
g : The TS788 is classified by IDSS as follows : (unit : µA)
min
--20
--0.2
140g
0.4
typ max
--0.6 --1.5
500g
1.2
4.1
0.88
unit
V
V
µA
mS
pF
pF
Marking
IDSS
E4
140 to 240
E5
210 to 350
E6
320 to 500
[Ta=25°C, VCC=4.5V, RL=1k, CIN=15pF, See specified Test Circuit.]
min
Voltage Gain
Reduced Voltage Characteristics
Frequency Characteristics
Input Resistance
Output Resistance
Total Harmonic Distortion
Output Noise Voltage
GV
GVV
GVf
ZIN
Zo
THD
VNO
VIN=10mV, f=1kHz
VIN=10mV, f=1kHz
VCC=4.51.5V
f=1kHz to 110Hz
f=1kHz
f=1kHz
VIN=30mV, f=1kHz
VIN=0 , A curve
25
Test Circuit
Voltage Gain
Frequency Characteristics
Distortion
Reduced Voltage Characteristics
1k
15pF
+33uF
Vcc=4.5V
Vcc=1.5V
Package Dimensions
SMCP (unit : mm)
0.3
3
12
0.2
1.0
1.6
to
OSC
VTVM V THD B A
1kOutput Impedance
typ max
--3.0
--1.2 --3.5
--1.0
700
1.0
--110
0.1
0 to 0.1
1 : Drain
2 : Source
3 : Gate
unit
dB
dB
dB
m
%
dB
SANYO Electric Co., Ltd. Semiconductor Business Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
971128TM2fXHD


Features TS788 N- channel Junction FET Electret C ondenser Microphone TENTATIVE Features • Especially suited for use in elect ret condenser microphone. • TS788 is possible to make applied sets smaller a nd Slimmer. • Excellent voltage chara cteristics. • Excellent transient cha racteristics. • Adoption of FBET proc ess. Absolute Maximum Ratings / Ta=25° C Gate to Drain Voltage Gate Current Dr ain Current Allowable Power Dissipation Junction Temperature Storage Temperatu re VGDO IG ID PD Tj Tstg --20 10 1 100 150 --55to+150 min --20 --0.2 140g 0.4 unit V mA mA mW °C °C typ --0.6 1.2 4 .1 0.88 max --1.5 500g unit V V µA mS pF pF Electrical Characteristics / Ta= 25°C G-D Breakdown Voltage V( BR)GDO I G =--100µA VGS(off) VDS=5V, ID=1µA Cu toff Voltage IDSS VDS=5V, VGS=0 Drain C urrent | Yfs | VDS=5V, VGS=0, f=1kHz Fo rward Transfer Admittance Ciss VDS=5V, VGS=0, f=1MHz Input Capacitance VDS=5V, VGS=0, f=1MHz Crss Reverce Transfer Ca pacitance g : The TS788 is classified by IDSS as follows : (unit : µA) Marking I.
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