Output Applications. TS7988 Datasheet


TS7988 Applications. Datasheet pdf. Equivalent


TS7988


Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Ordering number :EN5959

NPN Triple Diffused Planar Silicon Transistor

TS7988
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
• High speed. • High breakdown voltage (VCBO=1600V). • High reliability (Adoption of HVP process). • Adoption of MBIT process.

Package Dimensions
unit:mm 2039D-TO3PML
[TS7988]
ø3.4 16.0 5.6 3.1

5.0 8.0 21.0 22.0

4.0

2.8 2.0

2.0

20.4

1.0

0.6

1

2

3

5.45

5.45

1:Base 2:Collector 3:Emitter SANYO:TO-3PML

Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Colletctor-to-Base Voltage Colletctor-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25˚ C Tj Tstg Conditions Ratings 1600 800 6 10 25 3.0 70 150 –55 to +150 Unit V V V A A W W
˚C ˚C

Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current DC Current Gain C-E Saturation Voltage B-E Saturation Voltage Storage Time Fall Time Symbol ICBO ICES IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) tstg tf VCE=800V, IE=0 VCE=1600V, RBE=0 800 1.0 15 4 30 7 5 1.5 3.0 0.2 V V µs µs VEB=4V, IC=0 VCE=5V, IC=1.0A VCE=5V, IC=7A IC=7A, IB=1.75A IC=7A, IB=1.75A IC=6A, IB1=1.0A, IB2=–2.5A IC=6A, IB1=1.0A, IB2=–2.5A Conditions Ratings min typ max 10 1.0 ...



TS7988
Ordering number :EN5959
NPN Triple Diffused Planar Silicon Transistor
TS7988
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
• High speed.
• High breakdown voltage (VCBO=1600V).
• High reliability (Adoption of HVP process).
• Adoption of MBIT process.
Package Dimensions
unit:mm
2039D-TO3PML
[TS7988]
16.0
ø3.4
5.6
3.1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Colletctor-to-Base Voltage
Colletctor-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚ C
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
DC Current Gain
C-E Saturation Voltage
B-E Saturation Voltage
Storage Time
Fall Time
Symbol
Conditions
ICBO
ICES
VCEO(sus)
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
tstg
tf
VCE=800V, IE=0
VCE=1600V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
VCE=5V, IC=1.0A
VCE=5V, IC=7A
IC=7A, IB=1.75A
IC=7A, IB=1.75A
IC=6A, IB1=1.0A, IB2=–2.5A
IC=6A, IB1=1.0A, IB2=–2.5A
2.8
2.0
1.0
123
5.45 5.45
2.0
0.6
1:Base
2:Collector
3:Emitter
SANYO:TO-3PML
Ratings
1600
800
6
10
25
3.0
70
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ
800
15
4
max
10
1.0
1.0
30
7
5
1.5
3.0
0.2
Unit
µA
mA
V
mA
V
V
µs
µs
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42498TS (KOTO) TA-1619 No.5959-1/3

TS7988
Switching Time Test Circuit
TS7988
PW=20µs
DC1%
INPUT
50
VR
IB1
IB2
RB
+
100µF
OUTPUT
+
470µF
RL=33.3
VBE=–2V
VCC=200V
I C - VCE
10
9 2.0A 1.8A 1.6A 1.4A
8
1.2A
7 1.0A
0.8A
6 0.6A
5 0.4A
4
0.2A
3
2
1
IB=0
00 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE – V
100
7
5 Ta=120˚C
3
25˚C
2
hFE - I C
VCE =5V
–40˚C
10
7
5
3
2
1.0
0.1
23
5 7 1.0
23
5 7 10
Collector Current, IC – A
SW Time - I C
7
5
tstg
3
2
1.0
7
5
3 tf
2
0.1
VCC= 200V, R load
IC/ IB1=6, IB2/ IB1=2.5
7
7 0.1 2 3 5 7 1.0
2 3 5 7 10
Collector Current, IC – A
2
10 VCE=5V
9
I C - VBE
8
7
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0
Base-to-Emitter Voltage, VBE – V
10
7
IC/ IB=5
5
3
2
VCE(sat) - I C
1.2
1.0
7
5
3
2
0.1 Ta=–40˚C
7
5 120˚C
25˚C
3
2
0.01
0.1
23
5 7 1.0
23
Collector Current, IC – A
SW Time - I B2
10
7
5 tstg
3
2
5 7 10
1.0
7 tf
5
3
2
0.1
VCC= 200V, R load
IC=6A, IB1=1A
7
7 0.1
23
5 7 1.0
2
Base Current, IB2 – A
3
5 7 10
No.5959-2/3




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