TN6705A Purpose Amplifier Datasheet

TN6705A Datasheet, PDF, Equivalent


Part Number

TN6705A

Description

NPN General Purpose Amplifier

Manufacture

Fairchild Semiconductor

Total Page 2 Pages
Datasheet
Download TN6705A Datasheet


TN6705A
TN6705A
Discrete POWER & Signal
Technologies
C
BE
TO-226
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 1.2 A. Sourced from
Process 38. See TN6715A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
45
VCBO
Collector-Base Voltage
60
VEBO
Emitter-Base Voltage
5.0
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
1.5
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
TN6705a
1.0
8.0
125
50
Units
V
V
V
A
°C
Units
W
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation

TN6705A
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CBO
V(BR)EBO
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
ICBO Collector Cutoff Current
IEBO Emitter Cutoff Current
IC = 10 mA, IB = 0
IC = 100 mA, IE = 0
IE = 1.0 mA, IC = 0
VCB = 60 V, IE = 0
VEB = 5.0 V, IC = 0
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
VCE = 2.0 V, IC = 50 mA
VCE = 2.0 V, IC = 250 mA
VCE = 2.0 V, IC = 500 mA
IC = 500 mA, IB = 50 mA
IC = 1.0 A, IB = 100 mA
VCE = 2.0 V, IC = 1.0 A
SMALL SIGNAL CHARACTERISTICS
Ccb Collector-Base Capacitance
hfe Small-Signal Current Gain
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
VCB = 10 V, f = 1.0 MHz
IC = 50 mA, VCE = 5.0 V,
f = 20 MHz
45 V
60 V
5.0 V
0.1 µA
0.1 µA
40
40 250
25
0.5
1.0
1.5
V
V
V
30 pF
2.5 20


Features TN6705A Discrete POWER & Signal Technol ogies TN6705A C TO-226 BE NPN Gener al Purpose Amplifier This device is des igned for use as general purpose amplif iers and switches requiring collector c urrents to 1.2 A. Sourced from Process 38. See TN6715A for characteristics. A bsolute Maximum Ratings* Symbol VCEO VC BO VEBO IC TJ, Tstg Collector-Emitter V oltage Collector-Base Voltage Emitter-B ase Voltage Collector Current - Continu ous TA = 25°C unless otherwise noted Parameter Value 45 60 5.0 1.5 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *Th ese ratings are limiting values above w hich the serviceability of any semicond uctor device may be impaired. NOTES: 1) These ratings are based on a maximum j unction temperature of 150 degrees C. 2 ) These are steady state limits. The fa ctory should be consulted on applicatio ns involving pulsed or low duty cycle o perations. Thermal Characteristics Sym bol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristi.
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