TN6727A Purpose Amplifier Datasheet

TN6727A Datasheet, PDF, Equivalent


Part Number

TN6727A

Description

PNP General Purpose Amplifier

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
Datasheet
Download TN6727A Datasheet


TN6727A
TN6727A
CBE
TO-226
PNP General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switches requiring collector currents to
1A. Sourced from Process 77. See TN6726A for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCES
Collector-Emitter Voltage
40
VCBO
Collector-Base Voltage
50
VEBO
Emitter-Base Voltage
5
IC Collector Current - Continuous
1.5
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Units
V
V
V
A
°C
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
TN6727A
PD Total Device Dissipation
Derate above 25°C
1
8
RθJC
Thermal Resistance, Junction to Case
50
RθJA
Thermal Resistance, Junction to Ambient
125
Units
W
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
Page 1 of 2

TN6727A
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
BVCEO Collector-Emitter Breakdown Voltage
BVCBO Collector-Base Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC = 10 mA
IC = 1 mA
IE = 1 mA
VCB = 50 V
VEB = 5 V
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 10 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
IC = 1A, VCE = 1 V
IC = 1 A, IB = 100 mA
IC = 1 A, VCE = 1 V
SMALL SIGNAL CHARACTERISTICS
Ccb Output Capacitance
hfe Small Signal Current Gain
*Pulse Test: Pulse Width 300 µs, Duty Cycle 1.0%
VCB = 10 V, IE = 0, f = 1MHz
IC = 50 mA,VCE = 10 V, f=20MHz
40
50
5
55
60
50
2.5
100
100
250
0.5
1.2
30
25
V
V
V
nA
nA
-
V
V
pF
-
Page 2 of 2


Features TN6727A TN6727A CB E TO-226 PNP Gen eral Purpose Amplifier This device is d esigned for general purpose medium powe r amplifiers and switches requiring col lector currents to 1A. Sourced from Pro cess 77. See TN6726A for characteristic s. Absolute Maximum Ratings* Symbol VC ES VCBO VEBO IC TJ, Tstg Parameter Coll ector-Emitter Voltage Collector-Base Vo ltage Emitter-Base Voltage Collector Cu rrent - Continuous TA = 25°C unless o therwise noted Value 40 50 5 1.5 -55 t o +150 Units V V V A °C Operating an d Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semico nductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) The se are steady state limits. The factory should be consulted on applications in volving pulsed or low duty cycle operat ions. Thermal Characteristics Symbol TA = 25°C unless otherwise noted Max Characteristic TN6727A PD RθJC RθJA Total Device Dissipation Derate.
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