TN6R05 Supplies Applications Datasheet

TN6R05 Datasheet, PDF, Equivalent


Part Number

TN6R05

Description

Switching Regulator IC for RCC Method Power Supplies Applications

Manufacture

Sanyo Semicon Device

Total Page 4 Pages
Datasheet
Download TN6R05 Datasheet


TN6R05
Ordering number : ENN8034
TN6R05
TN6R05
ExPD (Excellent Power Device)
Switching Regulator IC for RCC
Method Power Supplies Applications
Features
Original contorol IC for Delay RCC-type.
High voltage power MOSFET with current sense.
Overload protection.
Only few external components required.
Small Full-Isolation package : TO-220FI5H.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
IC Input Voltage
Allowable Power Dissipation
Operating Temperature
Junction Temperature
Storage Temperature
Symbol
VDS
ID
IDP
VIN
PD
Topr
Tj
Tstg
Conditions
PW10µs, duty cycle1%
Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Cutoff Voltage
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
[IC]
Restriction of Drive Voltage
Detection Voltage of Feedback and
Overload Amplifier
V(BR)DSS
IDSS
VGS(off)
RDS(on)
Ciss
Coss
VIN(OV)
VFB
ID=1mA, VDELAY=0
VDS=650V, VDELAY=0
VDS=10V, ID=1mA
ID=3.3A, VDELAY=15V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
IIN=1mA, VFB=0
VDELAY, VIN=10V, IIN=50mA
Ratings
650
6.5
19.5
30
2.0
40
--25 to +125
150
--55 to +150
Unit
V
A
A
V
W
W
°C
°C
°C
Ratings
min typ max
Unit
650
3.0
0.95
1900
310
V
1.0 mA
4.0 V
1.2
pF
pF
30
2.0
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O0504 TS IM TB-00000440 No.8034-1/4

TN6R05
TN6R05
Recommend Operating Conditions at Ta=25°C
Parameter
IC Input Voltage
Operating Frequency
Symbol
VIN
FOSC
Package Dimensions
unit : mm
2226
Conditions
10.0
3.2
4.5
2.8
0.9
0.5
2.54 2.54
1.27 3 1.27
12 45
1.27
2.54
1.27
2.54
2.4
0.7
(0.9) 1 : FB
2 : Delay
1.5
3.0
3 : Drain
4 : VIN
6.5 5 : Source
SANYO : TO-220FI5H
Block Diagram
VIN 4 Detection of Timing Signal
DELAY 2
Restriction of
Drive Voltage
Sense MOS
3 DRAIN
FB 1
Feedback and
Overload Amplifier
P.MOS SOURCE
5 (GND)
Pin Functions
Pin No.
1
2
3
4
5
Symbol
FB
DELAY
DRAIN
VIN
SOURCE(GND)
Function
Input for feedback voltage and current sense
Input for timing signal
Power MOSFET Drain
Input for Start-up voltage and drive voltage
Power MOSFET Source (Ground)
Ratings
±10 to ±25
20 to 200
Unit
V
kHz
No.8034-2/4


Features Ordering number : ENN8034 TN6R05 ExPD (Excellent Power Device) TN6R05 Featur es • • • • • Switching Regul ator IC for RCC Method Power Supplies A pplications Original contorol IC for D elay RCC-type. High voltage power MOSFE T with current sense. Overload protecti on. Only few external components requir ed. Small Full-Isolation package : TO-2 20FI5H. Specifications Absolute Maximu m Ratings at Ta=25°C Parameter Drain-t o-Source Voltage Drain Current (DC) Dra in Current (Pulse) IC Input Voltage All owable Power Dissipation Operating Temp erature Junction Temperature Storage Te mperature Symbol VDS ID IDP VIN PD Topr Tj Tstg PW≤10µs, duty cycle≤1% Co nditions Ratings 650 6.5 19.5 30 2.0 Tc =25°C 40 --25 to +125 150 --55 to +150 Unit V A A V W W °C °C °C Electric al Characteristics at Ta=25°C Paramete r [MOSFET] Drain-to-Source Breakdown Vo ltage Zero-Gate Voltage Drain Current C utoff Voltage Static Drain-to-Source On -State Resistance Input Capacitance Output Capacitance [IC] Restriction of Drive Vol.
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