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TPC6501

Toshiba Semiconductor
Part Number TPC6501
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Apr 16, 2005
Detailed Description TPC6501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6501 High-Speed Switching Applications DC-DC Converter Applica...
Datasheet PDF File TPC6501 PDF File

TPC6501
TPC6501

Overview
TPC6501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6501 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • • • High DC current gain: hFE = 400 to 1000 (IC = 0.
2 A) Low collector-emitter saturation voltage: VCE (sat) = 0.
12 V (max) High-speed switching: tf = 25 ns (typ.
) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC t = 10 s DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC (Note) Tj Tstg Rating 20 10 7 2.
0 3.
5 200 0.
8 1.
6 150 −55 to 150 Unit V V V A mA W °C °C JEDEC JEITA ...


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