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TPC8302

Toshiba Semiconductor
Part Number TPC8302
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Apr 16, 2005
Detailed Description TPC8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L −π−MOSVI) 2 TPC8302 Lithium Ion Battery Applicati...
Datasheet PDF File TPC8302 PDF File

TPC8302
TPC8302

Overview
TPC8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L −π−MOSVI) 2 TPC8302 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs 2.
5 V Gate drive Small footprint due to small and thin package Low drain−source ON resistance: RDS (ON) = 100 mΩ (typ.
) High forward transfer admittance: |Yfs| = 5 S (typ.
) Low leakage current: IDSS = −10 µA (max) (VDS = −20 V) Enhancement−mode: Vth = −0.
5~ −1.
1 V (VDS = −10 V, ID = −200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD 2) EAS IAR EAR T...


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