Silicon Transistor. TIP32 Datasheet


TIP32 Transistor. Datasheet pdf. Equivalent


TIP32


PNP Epitaxial Silicon Transistor
TIP32 Series(TIP32/32A/32B/32C)

TIP32 Series(TIP32/32A/32B/32C)
Medium Power Linear Switching Applications
• Complement to TIP31/31A/31B/31C

1

TO-220 2.Collector 3.Emitter

1.Base

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Collector-Base Voltage Parameter : TIP32 : TIP32A : TIP32B : TIP32C Value - 40 - 60 - 80 - 100 - 40 - 60 - 80 -100 -5 -3 -5 -3 40 2 150 - 65 ~ 150 Units V V V V V V V V V A A A W W °C °C

VCEO

Collector-Emitter Voltage : TIP32 : TIP32A : TIP32B : TIP32C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature

VEBO IC ICP IB PC PC TJ TSTG

Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : TIP32 : TIP32A : TIP32B : TIP32C Collector Cut-off Current : TIP32/32A : TIP32B/32C Collector Cut-off Current : TIP32 : TIP32A : TIP32B : TIP32C IEBO hFE VCE(sat) VBE(sat) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product VCE = - 40V, VEB = 0 VCE = - 60V, VEB = 0 VCE = - 80V, VEB = 0 VCE = - 100V, VCE = 0 VEB = - 5V, IC = 0 VCE = - 4V, IC = - 1A VCE = - 4V, IC = - 3A IC = - 3A, IB = - 375mA VCE = - 4V, IC = - 3A ...



TIP32
TIP32 Series(TIP32/32A/32B/32C)
Medium Power Linear Switching Applications
• Complement to TIP31/31A/31B/31C
1 TO-220
PNP Epitaxial Silicon Transistor
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PC
TJ
TSTG
Parameter
Collector-Base Voltage
: TIP32
: TIP32A
: TIP32B
: TIP32C
Collector-Emitter Voltage : TIP32
: TIP32A
: TIP32B
: TIP32C
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
Value
- 40
- 60
- 80
- 100
- 40
- 60
- 80
-100
-5
-3
-5
-3
40
2
150
- 65 ~ 150
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
ICEO
ICES
IEBO
hFE
Parameter
* Collector-Emitter Sustaining Voltage
: TIP32
: TIP32A
: TIP32B
: TIP32C
Collector Cut-off Current
: TIP32/32A
: TIP32B/32C
Collector Cut-off Current
: TIP32
: TIP32A
: TIP32B
: TIP32C
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(sat)
* Base-Emitter Saturation Voltage
fT Current Gain Bandwidth Product
* Pulse Test: PW300µs, Duty Cycle2%
Test Condition
IC = - 30mA, IB = 0
VCE = - 30V, IB = 0
VCE = - 60V, IB = 0
VCE = - 40V, VEB = 0
VCE = - 60V, VEB = 0
VCE = - 80V, VEB = 0
VCE = - 100V, VCE = 0
VEB = - 5V, IC = 0
VCE = - 4V, IC = - 1A
VCE = - 4V, IC = - 3A
IC = - 3A, IB = - 375mA
VCE = - 4V, IC = - 3A
VCE = - 10V, IC = - 500mA
Min.
-40
-60
-80
-100
25
10
3.0
©2000 Fairchild Semiconductor International
Units
V
V
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C
Max. Units
V
V
V
V
- 0.3
- 0.3
mA
mA
- 200
- 200
- 200
- 200
-1
µA
µA
µA
µA
mA
50
- 1.2
- 1.8
V
V
MHz
Rev. A, February 2000

TIP32
Typical Characteristics
1000
100
VCE = -4V
10
1
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
-10000
-10
IC(MAX) (PULSE)
IC(MAX) (DC)
-1
100µs
TIP32 VCEO MAX.
TIP32A VCEO MAX.
TIP32B VCEO MAX.
TIP32C VCEO MAX.
-0.1
-10
-100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Safe Operating Area
-10000
-1000
VBE(sat)
IC/IB = 10
-100
VCE(sat)
-10
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
-10000
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
50
45
40
35
30
25
20
15
10
5
0
0
25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Figure 4. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000




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