8A Thyristor. TF821M Datasheet

TF821M Thyristor. Datasheet pdf. Equivalent


Sanken electric TF821M
TO-220 8A Thyristor
TF821M, TF841M, TF861M
s Features
qRepetitive peak off-state voltage: VDRM=200, 400, 600V
qAverage on-state current: IT(AV)=8A
qGate trigger current: IGT=15mA max
External Dimensions
(Unit: mm)
10.4max
5.0max
2.1max
φ 3.75±0.1
a
b
1.35±0.15
2.5±0.1
2.5±0.1
0.65 +–00..12
1.7±0.2
(1) (2) (3)
(1). Cathode (K)
a. Part Number
(2). Anode (A)
b. Lot Number
(3). Gate (G)
Weight: Approx. 2.6g
sAbsolute Maximum Ratings
Parameter
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Non-repetitive peak reverse voltage
Average on-state current
RMS on-state current
Surge on-state current
Peak forward gate current
Peak forward gate voltage
Peak reverse gate voltage
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Symbol
VDRM
VRRM
VDSM
VRSM
IT(AV )
IT(RMS)
ITSM
IFGM
VFGM
VRGM
PGM
PG (AV)
Tj
Tstg
Ratings
TF821M TF841M TF861M
200 400 600
200 400 600
300 500 700
300 500 700
8.0
12.6
120
2.0
10
5.0
5.0
0.5
– 40 to +125
– 40 to +125
Unit
V
V
V
V
A
A
A
A
V
V
W
W
°C
°C
Conditions
Tj= – 40 to +125°C, RGK =1k
50Hz Half-cycle sinewave, Continuous current, Tc=83°C
50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C
f 50Hz, duty 10%
f 50Hz
f 50Hz, duty 10%
sElectrical Characteristics
Parameter
Symbol
Off-state current
Reverse current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Critical rate-of-rise of off-state voltage
Turn-off time
Thermal resistance
IDRM
IRRM
VTM
VGT
IGT
VGD
IH
dv/dt
tq
Rth
min
0.1
Ratings
typ
5.0
4.0
50
30
max
2.0
2.0
1.4
1.5
15
2.7
Unit
mA
mA
V
V
mA
V
mA
V/µS
µS
°C/ W
Conditions
Tj=125°C, VD=VDRM(VRRM), RGK=1k
TC=25°C, ITM=15A
VD=6V, RL=10, TC=25°C
VD=1/2 × VDRM, Tj=125°C, RGK=1k
RGK=1k, Tj=25°C
VD=1/2 × VDRM, Tj=125°C, RGK=1k, CGK=0.033µF
Tc = 25°C
Junction to case
14


TF821M Datasheet
Recommendation TF821M Datasheet
Part TF821M
Description TO-220 8A Thyristor
Feature TF821M; TO-220 8A Thyristor TF821M, TF841M, TF861M s Features qRepetitive peak off-state voltage: VDRM=200,.
Manufacture Sanken electric
Datasheet
Download TF821M Datasheet




Sanken electric TF821M
vT iT Characteristics (max)
100
50
10
5
1
0.5
0.3
1.0
2.0 3.0
On-state voltage vT ( V )
4.0
IT(AV) – PT(AV) Characteristics
18
50Hz Half-cycle sinewave
θ : Conduction angle
16
14 0° θ 180°
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14
Average on-state current IT(AV) (A)
Pulse trigger temperature
vCharacteristics gt (Typical)
30
10 TC=– 40°C
–20°C
25°C
75°C
125°C
vgt
50%
tw
1
TF821M, TF841M, TF861M
ITSM Ratings
140
120
100
Initial junction temperature
Tj=125°C
I TSM
10 ms
1 cycle
80
60
40
1
5 10
50 100
Number of cycle
IT(AV) – Tc Ratings
150
125
100
50Hz Half-cycle sinewave
θ: Conduction angle
0° θ 180°
75
50
25
0
0 2 4 6 8 10 12 14
Average on-state current IT(AV) (A)
16
Pulse trigger temperature
Characteristics igt (Typical)
30
TC=– 40°C
10 – 20°C
25°C
75°C
125°C
igt
50%
tw
1
Gate Characteristics
12
2
10
1
8
0
0 10 20 30
6 Gate trigger current IGT (mA)
4
2 See graph at the upper right
0
0123
Gate current iGF (A)
IH temperature Characteristics
(Typical)
26 (RGK=1k)
20
10
0.1
0.5 1
10 102 103
Pulse width tw (µs)
104
VGT temperature Characteristics
(Typical)
1.0
(VD=6V, RL=10)
0.8
0.6
0.4
0.2
0
–40 0 25 50 75 100 125
Junction temperature Tj (°C)
0.1
0.5 1
10 102 103
Pulse width t w (µs)
104
IGT temperature Characteristics
(Typical)
14
(VD=6V, RL=10)
12
10
8
6
4
2
0
– 40 0 25 50 75 100 125
Junction temperature Tj (°C)
0
–40
0 25 50 75 100 125
Case temperature Tc (°C)
Transient thermal resistance
Characteristics (Junction to case)
10
1
0.1
1
10 102 103
t, Time (ms)
104
15







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