Switching Thyristor. TF91510B Datasheet

TF91510B Thyristor. Datasheet pdf. Equivalent


Dynex Semiconductor TF91510B
Replaces December 1998 version, DS4279-3.0
TF915..B
TF915..B
Fast Switching Thyristor
DS4279-4.0 January 2000
APPLICATIONS
s High Power Inverters And Choppers
s UPS
s Railway Traction
s Induction Heating
s AC Motor Drives
s Cycloconverters
KEY PARAMETERS
VDRM
IT(RMS)
ITSM
dV/dt
1400V
1700A
20000A
300V/µs
dI/dt 500A/µs
tq 40µs
FEATURES
s Double Side Cooling
s High Surge Capability
s High Voltage
VOLTAGE RATINGS
Type Number
TF915 14B
TF915 12B
TF915 10B
TF915 08B
TF915 06B
Repetitive
Peak
Voltages
VV
DRM RRM
1400
1200
1000
800
600
Lower voltage grades available.
Conditions
VRSM = VRRM + 100V
I = I = 60mA
DRM RRM
at V or V & T
RRM
DRM
vj
Outline type code: MU169.
See Package Details for further information.
CURRENT RATINGS
Symbol
Parameter
IT(AV)
IT(RMS)
Mean on-state current
RMS value
Conditions
Half sinewave, 50Hz, Tcase = 80oC
Half sinewave, 50Hz, Tcase = 80oC
Max.
1080
Units
A
1700
A
1/13


TF91510B Datasheet
Recommendation TF91510B Datasheet
Part TF91510B
Description Fast Switching Thyristor
Feature TF91510B; TF915..B TF915..B Fast Switching Thyristor Replaces December 1998 version, DS4279-3.0 DS4279-4.0 Ja.
Manufacture Dynex Semiconductor
Datasheet
Download TF91510B Datasheet




Dynex Semiconductor TF91510B
TF915..B
SURGE RATINGS
Symbol
Parameter
I Surge (non-repetitive) on-state current
TSM
I2t I2t for fusing
Conditions
10ms half sine; V = 0% V , T = 125˚C
R RRM j
10ms half sine; VR = 0% VRRM, Tj = 125˚C
Max. Units
20.0 kA
2000 x 103 A2s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Rth(j-c)
Thermal resistance - junction to case
Rth(c-h)
Thermal resistance - case to heatsink
T Virtual junction temperature
vj
T Storage temperature range
stg
- Clamping force
Conditions
Double side cooled
dc
Single side cooled
Anode dc
Cathode dc
Clamping force 23.5kN
with mounting compound
Double side
Single side
On-state (conducting)
Reverse (blocking)
Min. Max. Units
- 0.020 oC/W
- - oC/W
- - oC/W
- 0.006 oC/W
- 0.012 oC/W
- 125 oC
- 125 oC
-40 150
oC
22.3 24.6 kN
MEASUREMENT OF RECOVERED CHARGE - QRA1
Measurement of QRA1 : QRA1 = IRR x tRR
2
ITM
tp = 1ms
dIR/dt
QRA1
0.5x IRR
IRR
2/13



Dynex Semiconductor TF91510B
DYNAMIC CHARACTERISTICS
TF915..B
Symbol
Parameter
Conditions
Min. Max. Units
V Maximum on-state voltage
TM
At 2000A peak, T = 25oC
case
-
IRRM/IDRM Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
-
dV/dt Maximum linear rate of rise of off-state voltage Linear to 60% V T = 125oC, Gate open circuit -
DRM j
dI/dt Rate of rise of on-state current
Gate source 20V, 20
tr 0.5µs, Tj = 125˚C
Repetitive 50Hz
Non-repetitive
-
-
VT(TO)
Threshold voltage
At Tvj = 125oC
-
rT On-state slope resistance
At Tvj = 125oC
-
tgd
t(ON)TOT
Delay time
Total turn-on time
Tj = 25˚C, IT = 50A,
VD = 300V, IG = 1A,
dI/dt = 50A/µs, dIG/dt = 1A/µs
1.5*
3.0*
I Holding current
H
T = 25oC, I = 1A, V = 12V
j TM D
100*
I Latching current
L
t Turn-off time
q
*Typical value.
T = 25oC, I = 0.5A, V = 12V
jG
D
300*
Tj = 125˚C, IT = 250A, VR = 50V,
dV/dt = 20V/µs (Linear to 60% VDRM),
tq code: B
dIR/dt = 50A/µs, Gate open circuit
-
1.75
60
300
500
800
1.25
0.25
-
-
-
-
40
V
mA
V/µs
A/µs
A/µs
V
m
µs
µs
mA
mA
µs
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
VGT
I
GT
V
GD
VRGM
IFGM
P
GM
PG(AV)
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Conditions
VDRM = 12V, Tcase = 25oC, RL = 6
VDRM = 12V, Tcase = 25oC, RL = 6
At
V
DRM
T
case
=
125oC,
R
L
=
1k
Anode positive with respect to cathode
Typ. Max. Units
- 3.0 V
- 200 mA
- 0.2 V
- 5.0 V
- 10 A
- 50 W
- 3W
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