Power Amplifier. TGA1073C-SCC Datasheet

TGA1073C-SCC Amplifier. Datasheet pdf. Equivalent

TGA1073C-SCC Datasheet
Recommendation TGA1073C-SCC Datasheet
Part TGA1073C-SCC
Description 36 - 40 GHz Power Amplifier
Feature TGA1073C-SCC; Product Datasheet August 15, 2000 36 - 40 GHz Power Amplifier TGA1073C-SCC Key Features and Perfor.
Manufacture TriQuint Semiconductor
Datasheet
Download TGA1073C-SCC Datasheet




TriQuint Semiconductor TGA1073C-SCC
Product Datasheet
August 15, 2000
36 - 40 GHz Power Amplifier
TGA1073C-SCC
Key Features and Performance
• 0.25um pHEMT Technology
• 36-40 GHz Frequency Range
• 26 dBm Nominal Pout @ P1dB, 38GHz
• 15 dB Nominal Gain
• Bias 5-7V @ 240 mA
• Chip Dimensions 2.4 mm x 1.45 mm
Primary Applications
• Point-to-Point Radio
The TriQuint TGA1073C-SCC is a two stage PA MMIC
design using TriQuint’s proven 0.25 µm Power pHEMT
process to support a variety of millimeter wave
applications including point-to-point digital radio and
point-to-multipoint systems.
The two-stage design consists of two 400 µm input
devices driving four 400 µm output devices.
Point-to-Multipoint Radio
TGA1073C Typical RF Performance (Fixtured)
20
15
S21
10
5
The TGA1073C provides 24 dBm of output power at
1dB gain compression and 26 dBm saturated output
power across the 36-40 GHz with a typical small signal
gain of 15 dB.
The TGA1073C requires a minimum of off-chip
components. Each device is 100% DC and RF tested
on-wafer to ensure performance compliance. The
device is available in chip form.
0
-5
-10
S22
-15
-20
S11
-25
33 34 35 36 37 38 39 40 41 42 43
Frequency (GHz)
Typical Performance, 36-40 GHz
Parameter
Small Signal Gain
Gain Flatness
Output P1dB
Saturated Output Power
Saturated PAE
Output OTOI
IMR3 @SCL = P1dB- 10dB
Input Return Loss
Output Return Loss
Reverse Isolation
Quiescent Current
Unit
dB
dBpp
dBm
dBm
%
dBm
dBc
dB
dB
dB
mA
+5V Supply
24
26
23
225
+6V Supply
15
1
25
27
22
34
34
-10
-8
-35
240
+7V Supply
26
28
20
260
TGA1073C Typical RF Performance (Fixtured)
33
30 P1dB
27
24
21
VD = +5V, +6V, +7V
18
15
12
IMR3 @ VD = +6V
9
6
3
36 37 38 39 40 41
Frequency (GHz)
50
48
46
44
42
40
38
36
34
32
30
42
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
1



TriQuint Semiconductor TGA1073C-SCC
MAXIMUM RATINGS
SYMBOL
V+
I+
PIN
PD
TCH
TM
TSTG
PARAMETER 5/
POSITIVE SUPPLY VOLTAGE
POSITIVE SUPPLY CURRENT
INPUT CONTINUOUS WAVE POWER
POWER DISSIPATION
OPERATING CHANNEL TEMPERATURE
MOUNTING TEMPERATURE
(30 SECONDS)
STORAGE TEMPERATURE
Product Datasheet
TGA1073C-SCC
VALUE
8V
480 mA
23 dBm
3.84 W
150 0C
320 0C
-65 to 150 0C
NOTES
1/
4/
2/ 3/
1/ Total current for all stages.
2/ These ratings apply to each individual FET.
3/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum
life, it is recommended that junction temperatures be maintained at the lowest possible levels.
4/ This value reflects an estimate. Actual value will be inserted as soon as it is determined.
5/ These ratings represent the maximum operable values for this device.
NOTES SYMBOL
IDSS1
GM1
1/ |VP1|
1/ |VP2|
1/ |VP3-6|
1/ |VBVGD1,2|
1/ |VBVGS1|
DC SPECIFICATIONS (100%)
(TA = 25 °C + 5 °C)
TEST CONDITIONS 2/
STD
STD
STD
STD
STD
STD
STD
LIMITS
MIN
MAX
40 188
88 212
0.5 1.5
0.5 1.5
0.5 1.5
11 30
11 30
UNITS
mA
mS
V
V
V
V
V
1/ VP, VBVGD, and VBVGS are negative.
2/ The measurement conditions are subject to change at the manufacture’s discretion (with appropriate notification to
the buyer).
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
2



TriQuint Semiconductor TGA1073C-SCC
NOTE
TEST
1/ SMALL-SIGNAL
GAIN MAGNITUDE
POWER OUTPUT
AT 1 dB GAIN
COMPRESSION
1/ INPUT RETURN LOSS
MAGNITUDE
1/ OUTPUT RETURN LOSS
MAGNITUDE
OUTPUT THIRD ORDER
INTERCEPT
RF SPECIFICATIONS
(TA = 25°C + 5°C)
Product Datasheet
TGA1073C-SCC
MEASUREMENT
CONDITIONS
6V @ 240mA
36 – 39 GHz
40 GHz
37 GHz
38.5 GHz
40 GHz
36 – 40 GHz
VALUE
MIN
12
9
23
23
21
TYP
15
14
26
26
25
-10
MAX
UNITS
dB
dB
dBm
dBm
dBm
dB
36 – 40 GHz
-8 dB
33 dBm
1/ RF probe data is taken at 1 GHz steps.
RELIABILITY DATA
PARAMETER
RθJC Thermal resistance
(channel to backside of
c/p)
BIAS CONDITIONS
VD (V)
6
ID (mA)
240
PDISS
(W)
1.44
RθJC
(C/W)
32.43
TCH
(°C)
116.7
TM
(HRS)
2.1 E7
Note: Assumes eutectic attach using 1.5 mil thick 80/20 AuSn mounted to a 20mil CuMo Carrier at 70°C
baseplate temperature. Worst case condition with no RF applied, 100% of DC power is
dissipated.
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
3







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)