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Block Amplifier. TGA8622-SCC Datasheet |
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Product Data Sheet
2 - 20 GHz Gain Block Amplifier
TGA8622-SCC
Key Features and Performance
• 2 to 20 GHz Frequency Range
• 7.5 dB Gain with Greater than 30dB
Gain-Control Capability
• 20 dBm Output Power at 1 dB Gain
Compression
• 7 dB Noise Figure
• Input and Output SWR 1.7:1 Midband
• 2.769 x 2.159 x 0.152 mm (0.109 x
0.085 x 0.006 in.)
Description
The TriQuint TGA8622-SCC is a broadband general-purpose amplifier that operates
over the 2 to 20 GHz frequency range. Six 200um dual-gate FETs provide the
amplifier with a typical gain of 7.5 dB. Midband input and output SWRs are typically
1.7:1. This amplifier is directly cascadable and can be used in both gain control and
active temperature compensation applications. Ground is provided to the circuitry
through vias to the backside metallization.
The TGA8622-SCC is available in chip form and is readily assembled using
automated equipment. The device bond pads and backside are gold plated for
compatibility with eutectic alloy attach methods as well as thermocompression and
thermosonic wire-bonding processes.
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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TYPICAL
SMALL-SIGNAL
POWER GAIN
Gp vs. VCTRL
Product Data Sheet
TGA8622-SCC
TYPICAL
NOISE FIGURE
NF vs. VCTRL
VCTRL for particular gain levels is shown for reference only and may vary from device to device.
TYPICAL
OUTPUT POWER
P1dB vs. VCTRL
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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TYPICAL
RETURN LOSS
Product Data Sheet
TGA8622-SCC
ABSOLUTE
MAXIMUM
RATINGS
Positive supply voltage, V+………………………………………………………………………………….8 V
Positive supply voltage range w ith respect to negative supply voltage, V+ - V-………………………0 V to 12 V
Negative supply voltage range, V-………………………………………………………………………… 0 V to -5 V
Gain control voltage range, VCTRL……………………………………………………………………………-5 V to 4 V
Gain control voltage range w ith respect to positive supply voltage, VCTRL……………………………. 0 V to -10 V
Positive supply current, I+…..……………………………………………………………………………….370 mA
Pow er dissipation, PD, at (or below ) 25oC base-plate temperature *……………………………………2.9 W
Operating Channel temperature, TCH **………………………………………………………………………150oC
Mounting temperature (30 sec.), TM…………………………………………………………………………320oC
Storage temperature range, TSTG……………………………………………………………………………-65 to 150oC
Ratings over operating channel tem perature range, TCH (unless otherw ise noted).
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under "RF Characteristics" is not implied. Exposure to absolute maximum rated conditions
for extended periods may affect device reliability.
* For operation above 25oC base-plate temperature, derate linearly at the rate of 6.1 mW/oC.
** Operating channel temperature (TCH) w ill directly affect the device MTTF. For maximum life, it is recommended
that channel temperature be maintained at the low est possible level.
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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