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Discrete HFET. TGF4118-EPU Datasheet |
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TGF4118-EPU
411818 mm Discrete HFET
• 0.5 um gate finger length
• Nominal Pout of 9.0 Watts at 2.3 GHz
• Nominal PAE of 53% at 2.3 GHz
• Nominal Gain of 11.5 dB at 2.3 GHz
• Die Size 36.0 x 81.0 x 4.0 mils
(0.914 x 2.057 x 0.102 mm)
TGF4118-EPU RF Performance at F = 2.3 GHz
Vd = 8.0 V, Vg = -1.1 V, Iq = 1.69 A and TA = 25°C
50
Pout
48 PAE
46
44
42
55
50
45
40
40 35
38 30
36
25
34
32 20
30 15
20 22 24 26 28 30 32
Input Power (dBm)
TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504
Web: www.triquint.com 1
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TGF4118-EPU RF Performance for Vd = 7.0 V, F = 2.3 GHz, and TA = 25°C
Quiescent Id is 1.74 A (Vg = -1.1 V), 1.37 A (Vg = -1.3 V), and 1.02 A (Vg = -1.5 V)
130 42
120 41
110 40
100 39
90 38
80
70
60
Pout
50
40
30
60
37
Tch
36
35
Vg = -1.1 V
Vg = -1.3 V
Vg = -1.5 V
34
33
32
55
50
45
40
35
30
25
Vg = -1.1 V
20 Vg = -1.3 V
Vg = -1.5 V
15
15
14
13
12
11
10
9
Vg = -1.1 V
8 Vg = -1.3 V
Vg = -1.5 V
7
20 21 22 23 24 25 26 27 28 29 30 31
Input Power (dBm)
TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504
Web: www.triquint.com 2
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TGF4118-EPU RF Performance for Vd = 8.0 V, F = 2.3 GHz, and TA = 25°C
Quiescent Id is 1.69 A (Vg = -1.1 V), 1.38 A (Vg = -1.3 V), and 1.06 A (Vg = -1.5 V)
140 42
130 41
120 40
110 39
100 38
Tch
90 37
80
Pout
70
36
35
60 34
Vg = -1.1 V
50 Vg = -1.3 V 33
Vg = -1.5 V
40 32
60
55
50
45
40
35
30
25
Vg = -1.1 V
20 Vg = -1.3 V
Vg = -1.5 V
15
15
14
13
12
11
10
9
Vg = -1.1 V
Vg = -1.3 V
Vg = -1.5 V
8
20 21 22 23 24 25 26 27 28 29 30 31
Input Power (dBm)
TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504
Web: www.triquint.com 3
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