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TGF4260-EPU Datasheet, Equivalent, Discrete HFET.9.6mm Discrete HFET 9.6mm Discrete HFET |
| Part | TGF4260-EPU |
|---|---|
| Description | 9.6mm Discrete HFET |
| Feature | T
R
I
Q
U
I
N
T
S
E
M
I
C
O N
D
U
C
T O
R ,
I
N
C . TGF42 60-EPU 9. 6mm Discrete HFET q q q q q q 4260 9600 m x 0. 5 m Nominal Pout of 37 - dBm at 6. 0 GHz Nominal Gain of 9. 5 - dB at 6. 0 GHz Nominal PAE of 52 % a t 6. 0 GHz Suitable for high reliability applications 0,572 x 2,324 x 0,102 mm (0. 023 x 0. 092 x 0. 004 in. ) PRELIMINAR Y RF PERFORMANCE 40 Pout (dBm) 35 Gain - dB Output Power - dBm 30 25 20 15 10 5 0 15 17 19 21 23 Input Power - dBm 2 5 27 Gain (dB) PAE (%) 56 49 Power Add ed Efficency - % 42 35 28 21 14 7 0 29 TriQuint Semiconductor, Inc. • Tex as Facilities • . |
| Manufacture | TriQuint Semiconductor |
| Datasheet |
| Part | TGF4260-EPU |
|---|---|
| Description | 9.6mm Discrete HFET |
| Feature | T
R
I
Q
U
I
N
T
S
E
M
I
C
O N
D
U
C
T O
R ,
I
N
C . TGF42 60-EPU 9. 6mm Discrete HFET q q q q q q 4260 9600 m x 0. 5 m Nominal Pout of 37 - dBm at 6. 0 GHz Nominal Gain of 9. 5 - dB at 6. 0 GHz Nominal PAE of 52 % a t 6. 0 GHz Suitable for high reliability applications 0,572 x 2,324 x 0,102 mm (0. 023 x 0. 092 x 0. 004 in. ) PRELIMINAR Y RF PERFORMANCE 40 Pout (dBm) 35 Gain - dB Output Power - dBm 30 25 20 15 10 5 0 15 17 19 21 23 Input Power - dBm 2 5 27 Gain (dB) PAE (%) 56 49 Power Add ed Efficency - % 42 35 28 21 14 7 0 29 TriQuint Semiconductor, Inc. • Tex as Facilities • . |
| Manufacture | TriQuint Semiconductor |
| Datasheet |
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