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SSB APPLICATIONS. TH430 Datasheet |
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SD1728 (TH430)
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
.......OPTIMIZED FOR SSB
30 MHz
50 VOLTS
IMD − 30 dB
GOLD METALLIZATION
COMMON EMITTER
POUT = 250 W PEP WITH 14.5 dB GAIN
.550 4LFL (M177)
epoxy sealed
ORDER CODE
SD1728
B RA ND IN G
TH430
PIN CONNECTION
DESCRIPTION
The SD1728 is a 50 V epitaxial silicon NPN planar
transistor designed primarily for SSB and VHF
communications. This device utilizes emitter bal-
lasting for improved ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
Parameter
VCBO
VCEO
VEBO
IC
PDISS
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance
November 1992
1. Collector
2. Emitter
3. Base
4. Emitter
Value
110
55
4.0
40
330
+200
− 65 to +150
Unit
V
V
V
A
W
°C
°C
0.4 °C/W
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SD1728 (TH430)
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
S ymb o l
Test Conditions
BVCES
BVCEO
BVEBO
ICEO
ICES
hFE
IC = 200mA
IC = 200mA
IE = 20mA
VCE = 30V
VCE = 60V
VCE = 6V
VBE = 0V
IB = 0mA
IC = 0mA
IE = 0mA
IE = 0mA
IC = 10A
Min.
110
55
4.0
—
—
15
Va l u e
Typ. Max.
——
——
——
— 10
— 10
— 45
Unit
V
V
V
mA
mA
—
DYNAMIC
S ymb o l
Test Conditions
POUT f = 30 MHz
VCC = 50 V
GP* POUT = 250 W PEP VCC = 50 V
IMD*
ηc*
POUT = 250 W PEP
POUT = 250 W PEP
VCC = 50 V
VCC = 50 V
COB f = 1 MHz
VCB = 50 V
N ot e:
* Tw o Tone Method; f1 = 30.00 MHz; f2 = 30.001 MHz
In Class C: GP Min. 13.5 dB, Efficiency 65%@ 30MHz
GP Min. 10 dB, Efficiency 57%@ 70MHz
ICQ = 150 mA
ICQ = 150 mA
ICQ = 150 mA
ICQ = 150 mA
Value
Min. Typ. Max.
250 — —
14.5 — —
— — −30
37 — —
— — 360
Unit
W
dB
dBc
%
pF
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TYPICAL PERFORMANCE
CLASS AB
POWER OUTPUT PEP vs POWER INPUT
SD1728 (TH430)
COLLECTOR EFFICIENCY vs
POWER OUTPUT PEP
INTERMODULATION DISTORTION vs POWER OUTPUT PEP
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