SIPMOS Small-Signal-Transistor. SN7002N Datasheet

SN7002N Small-Signal-Transistor. Datasheet pdf. Equivalent

SN7002N Datasheet
Recommendation SN7002N Datasheet
Part SN7002N
Description SIPMOS Small-Signal-Transistor
Feature SN7002N; SIPMOS® Small-Signal-Transistor Feature • N-Channel • Enhancement mode • Logic Level • dv/dt rated •.
Manufacture Infineon Technologies AG
Datasheet
Download SN7002N Datasheet




Infineon Technologies AG SN7002N
SIPMOS® Small-Signal-Transistor
Feature
N-Channel
Enhancement mode
Logic Level
dv/dt rated
Qualified according to AEC Q101
Halogen-free according to IEC61249-2-21
SN7002N
Product Summary
VDS 60 V
RDS(on) 5
ID 0.2 A
PG-SOT-23
Gate
pin1
Drain
pin 3
Source
pin 2
Type
SN7002N
SN7002N
Package
PG-SOT-23
PG-SOT-23
Pb-free
Yes
Yes
Tape and Reel Information
H6327: 3000 pcs/reel
H6433: 10000 pcs/reel
Marking
sSN
sSN
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TA=25°C
TA=70°C
Pulsed drain current
TA=25°C
Reverse diode dv/dt
ID puls
dv/dt
IS=0.2A, VDS=48V, di/dt=200A/µs, Tjmax=150°C
Gate source voltage
ESD Class (JESD22-A114-HBM)
VGS
Power dissipation
TA=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Ptot
Tj , Tstg
Value
0.2
0.16
0.8
6
±20
0 (<250V)
0.36
-55... +150
55/150/56
Unit
A
kV/µs
V
W
°C
Rev. 2.6
Page 1
2011-07-11



Infineon Technologies AG SN7002N
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - ambient
at minimal footprint
SN7002N
Symbol
Values
Unit
min. typ. max.
RthJA
- - 350 K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0, ID=250µA
Gate threshold voltage, VGS = VDS
ID=26µA
Zero gate voltage drain current
VDS=60V, VGS=0, Tj=25°C
VDS=60V, VGS=0, Tj=150°C
Gate-source leakage current
VGS=20V, VDS=0
Drain-source on-state resistance
VGS=4.5V, ID=0.17A
Drain-source on-state resistance
VGS=10V, ID=0.5A
V(BR)DSS 60
-
-V
VGS(th) 0.8 1.4 1.8
IDSS
IGSS
µA
- - 0.1
- -5
- - 10 nA
RDS(on) - 3.9 7.5
RDS(on) - 2.5 5
Rev. 2.6
Page 2
2011-07-11



Infineon Technologies AG SN7002N
SN7002N
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min. typ. max.
Dynamic Characteristics
Transconductance
gfs
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS2*ID*RDS(on)max,
ID=0.16A
VGS=0, VDS=25V,
f=1MHz
VDD=30V, VGS=10V,
ID=0.5A, RG=6
0.09 0.17
- 34
- 7.2
- 2.8
- 2.4
- 3.2
- 5.3
- 3.6
-S
45 pF
9.6
4.2
3.6 ns
4.8
8
5.4
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
Qgd
Qg
VDD=48V, ID=0.5A
VDD=48V, ID=0.5A,
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=48V, ID = 0.5 A
- 0.14 0.21 nC
- 0.42 0.63
- 1 1.5
- 4.5 - V
Reverse Diode
Inverse diode continuous
forward current
IS
Inv. diode direct current, pulsedISM
Inverse diode forward voltage VSD
Reverse recovery time
trr
Reverse recovery charge
Qrr
TA=25°C
VGS=0, IF = IS
VR=30V, IF=lS,
diF/dt=100A/µs
- - 0.2 A
- - 0.8
- 0.83 1.2 V
- 14.2 21.3 ns
- 5.9 8.8 nC
Rev. 2.6
Page 3
2011-07-11







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