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Five Lines. SMDA05CN-5 Datasheet |
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SMDA05CN-5 THRU SMDA15CN-5
Bidirectional TVS Array
for Protection of Five Lines
PROTECTION PRODUCTS
Description
Features
The SMDAxxCN-5 series of transient voltage suppres-
sors are designed to protect components which are
connected to data and transmission lines from voltage
surges caused by ESD (electrostatic discharge), EFT
(electrical fast transients), and lightning.
TVS diodes are characterized by their high surge
capability, low operating and clamping voltages, and
fast response time. This makes them ideal for use as
board level protection of sensitive semiconductor
components. The SMDAxxCN-5 is designed to provide
transient suppression on multiple data lines and I/O
ports. The low profile SO-8 design allows the user to
protect up to five data and I/O lines with one package.
The SMDAxxCN-5 TVS diode array will meet the surge
requirements of IEC 61000-4-2 (Formerly IEC 801-2),
Level 4, Human Body Model for air and contact
discharge.
u 300 watts peak pulse power (tp = 8/20µs)
u Transient protection for data lines to
IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact)
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning) 12A (8/20µs)
u Protects up to 5 bidirectional lines
u Low operating voltage
u Low clamping voltage
u Solid-state silicon avalanche technology
Mechanical Characteristics
u JEDEC SO-8 package
u Molding compound flammability rating: UL 94V-0
u Marking : Part number, date code, logo
u Packaging : Tube or Tape and Reel per EIA 481
Applications
u RS-232 Data Lines
u RS-423 Data Lines
u LAN/WAN Equipment
u Servers
u Notebook & Desktop PC
u Set Top Box
u Peripherals
Circuit Diagram
Schematic & PIN Configuration
Revision 9/2000
SO-8 (Top View)
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SMDA05CN-5 THRU SMDA15CN-5
PROTECTION PRODUCTS
Absolute Maximum Rating
Rating
Peak Pulse Power (tp = 8/20µs)
Peak Pulse Current (tp = 8/20µs)
Lead Soldering Temperature
Operating Temperature
Storage Temperature
Symbol
Ppk
IPP
TL
TJ
TSTG
Value
300
20
260 (10 sec.)
-55 to +125
-55 to +150
Units
Watts
A
°C
°C
°C
Electrical Characteristics
SMDA05CN-5
Parameter
Symbol
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Maximum Peak Pulse Current
Junction Capacitance
VRWM
VBR
IR
VC
VC
IPP
Cj
Conditions
Minimum
It = 1mA
VRWM = 5V, T=25°C
IPP = 1A, tp = 8/20µs
IPP = 10A, tp = 8/20µs
tp = 8/20µs
Between I/O Pins and
Gnd
VR = 0V, f = 1MHz
6
Typical
Maximum
5
10
9.8
11
20
350
Units
V
V
µA
V
V
A
pF
SMDA15CN-5
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Maximum Peak Pulse Current
Junction Capacitance
Symbol
VRWM
VBR
IR
VC
VC
IPP
Cj
Conditions
Minimum
It = 1mA
VRWM = 15V, T=25°C
IPP = 1A, tp = 8/20µs
IPP = 10A, tp = 8/20µs
tp = 8/20µs
Between I/O Pins and
Gnd
VR = 0V, f = 1MHz
16.7
Typical
Maximum
15
1
24
30
10
75
Units
V
V
µA
V
V
A
pF
ã 2000 Semtech Corp.
2
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SMDA05CN-5 THRU SMDA15CN-5
PROTECTION PRODUCTS
Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
10
1
0.1
0.01
0.1
1 10 100
Pulse Duration - tp (µs)
1000
110
100
90
80
70
60
50
40
30
20
10
0
0
Pulse Waveform
e-t
td = IPP/2
Waveform
Parameters:
tr = 8µs
td = 20µs
5 10 15 20 25 30
Time (µs)
110
100
90
80
70
60
50
40
30
20
10
0
0
Power Derating Curve
25 50 75 100 125 150 175
Ambient Temperature - TA (oC)
Clamping Voltage vs. Peak Pulse Current
35
Waveform
30 Parameters:
tr = 8µs
25
SMDA15CN-5
td = 20µs
20
15 SMDA05CN-5
10
5
0
0 2 4 6 8 10 12 14 16 18 20 22 24
Peak Pulse Current - IPP (A)
ã 2000 Semtech Corp.
3
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