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SML1001R1AN Datasheet, Equivalent, POWER MOSFETS.N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| Part | SML1001R1AN |
|---|---|
| Description | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| Feature | LAB
TO3 Package Outline. Dimensions in mm (Inches) SEME SML1001R1AN SML901R1AN SML1001R3AN SML901R3AN 1000V 900V 1000V 900V 9. 5A 9. 5A 8. 5A 8. 5A 1. 10W 1. 10W 1. 30W 1. 30W POWER MOS IV™ N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS (Tcase =25°C unless otherwise stated) Parameter VDSS ID IDM VGS PD TJ , TSTJ Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source Voltage Total Power Dissipation @ Tcase = 25°C Derate above 25°C Operating and Storage Junction Temperature Range 901R1AN 900 9. 5 38 ±30 230 SML 1001R1AN 901R3AN 1000 900 8. 5 34 1. |
| Manufacture | Seme LAB |
| Datasheet |
| Part | SML1001R1AN |
|---|---|
| Description | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| Feature | LAB
TO3 Package Outline. Dimensions in mm (Inches) SEME SML1001R1AN SML901R1AN SML1001R3AN SML901R3AN 1000V 900V 1000V 900V 9. 5A 9. 5A 8. 5A 8. 5A 1. 10W 1. 10W 1. 30W 1. 30W POWER MOS IV™ N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS (Tcase =25°C unless otherwise stated) Parameter VDSS ID IDM VGS PD TJ , TSTJ Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source Voltage Total Power Dissipation @ Tcase = 25°C Derate above 25°C Operating and Storage Junction Temperature Range 901R1AN 900 9. 5 38 ±30 230 SML 1001R1AN 901R3AN 1000 900 8. 5 34 1. |
| Manufacture | Seme LAB |
| Datasheet |
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