avalanche rectifiers. RS1D Datasheet

RS1D rectifiers. Datasheet pdf. Equivalent


NXP RS1D
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D168
RS1 series
SMA fast soft-recovery
controlled avalanche rectifiers
Product specification
2000 Feb 14


RS1D Datasheet
Recommendation RS1D Datasheet
Part RS1D
Description SMA fast soft-recovery controlled avalanche rectifiers
Feature RS1D; DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 RS1 series SMA fast soft-recovery contro.
Manufacture NXP
Datasheet
Download RS1D Datasheet




NXP RS1D
Philips Semiconductors
SMA fast soft-recovery
controlled avalanche rectifiers
FEATURES
Glass passivated
High maximum operating temperature
Ideal for surface mount automotive applications
Low leakage current
Excellent stability
Guaranteed avalanche energy absorption capability
UL 94V-O classified plastic package
Shipped in 12 mm embossed tape
Marking: cathode, date code, type code
Easy pick and place.
Product specification
RS1 series
DESCRIPTION
DO-214AC surface mountable package with glass
passivated chip.
The well-defined void-free case is of a transfer-moulded
thermo-setting plastic. The small rectangular package
has two J bent leads.
olumns
k
cathode
band
a
Top view
Side view
MSA474
Fig.1 Simplified outline (DO-214AC) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating
System (IEC 134).
SYMBOL
PARAMETER
VRRM
repetitive peak reverse voltage
RS1A
RS1B
RS1D
RS1G
RS1J
RS1K
RS1M
VR continuous reverse voltage
RS1A
RS1B
RS1D
RS1G
RS1J
RS1K
RS1M
2000 Feb 14
CONDITIONS
2
MIN. MAX. UNIT
50 V
100 V
200 V
400 V
600 V
800 V
1000 V
50 V
100 V
200 V
400 V
600 V
800 V
1000 V



NXP RS1D
Philips Semiconductors
SMA fast soft-recovery
controlled avalanche rectifiers
Product specification
RS1 series
SYMBOL
PARAMETER
VRMS
root mean square voltage
RS1A
RS1B
RS1D
RS1G
RS1J
RS1K
RS1M
IF(AV)
average forward current
IFSM non-repetitive peak forward current
Tstg storage temperature
Tj junction temperature
CONDITIONS
averaged over any 20 ms period;
Ttp = 110 °C; see Fig.2
t = 8.3 ms half sine wave;
Tj = 25 °C prior to surge;
VR = VRRMmax
See Fig.3
MIN. MAX. UNIT
35 V
70 V
140 V
280 V
420 V
560 V
700 V
1A
25 A
65 +175 °C
65 +175 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VF forward voltage
IF = 1 A; see Fig.4
IR reverse current
VR = VRRMmax; see Fig.5
VR = VRRMmax; Tj = 165 °C; see Fig.5
trr
reverse recovery time
when switched from IF = 0.5 A to IR = 1 A;
RS1A to RS1J
measured at IR = 0.25 A; see Fig.9
RS1K and RS1M
Cd diode capacitance VR = 4 V; f = 1 MHz; see Fig.6
TYP.
MAX.
1.3
5
50
UNIT
V
µA
µA
250 ns
300 ns
7 pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point; see Fig.7
thermal resistance from junction to ambient
CONDITIONS
note 1
note 2
VALUE
27
100
150
UNIT
K/W
K/W
K/W
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper 35 µm.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 40 µm. For more
information please refer to the ‘General Part of associated Handbook’.
2000 Feb 14
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