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RFD16N02LSM

Part Number	RFD16N02LSM
Manufacturer	Intersil Corporation
Description	16A/ 20V/ 0.022 Ohm/ N-Channel/ Logic Level/ Power MOSFET
Published	Apr 16, 2005
Detailed Description	RFD16N02L, RFD16N02LSM May 1997 16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET Description The RFD16N02L and...
Datasheet	RFD16N02LSM PDF File

Overview

RFD16N02L, RFD16N02LSM May 1997 16A, 20V, 0.
022 Ohm, N-Channel, Logic Level, Power MOSFET Description The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers.
This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) ...

Similar Datasheet

RFD16N02L 16A/ 20V/ 0.022 Ohm/ N-Channel/ Logic Level/ Power MOSFET - Intersil Corporation
RFD16N02LSM 16A/ 20V/ 0.022 Ohm/ N-Channel/ Logic Level/ Power MOSFET - Intersil Corporation

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