Power MOSFET. RFL2N06L Datasheet

RFL2N06L MOSFET. Datasheet pdf. Equivalent

RFL2N06L Datasheet
Recommendation RFL2N06L Datasheet
Part RFL2N06L
Description 2A/ 60V/ 0.950 Ohm/ Logic Level/ N-Channel Power MOSFET
Feature RFL2N06L; RFL2N06L Data Sheet October 1999 File Number 1560.3 2A, 60V, 0.950 Ohm, Logic Level, N-Channel Powe.
Manufacture Intersil Corporation
Datasheet
Download RFL2N06L Datasheet




Intersil Corporation RFL2N06L
Data Sheet
RFL2N06L
October 1999 File Number 1560.3
2A, 60V, 0.950 Ohm, Logic Level,
N-Channel Power MOSFET
The RFL2N06L N-channel enhancement mode silicon gate
power field effect transistor is designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA9520.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFL2N06L
TO-205AF
RFL2N06L
NOTE: When ordering, use the entire part number.
Features
• 2A, 50V and 60V
• rDS(ON) = 0.950
• Design Optimized for 5V Gate Drives
• Can be Driven from QMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
GATE
SOURCE
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999



Intersil Corporation RFL2N06L
RFL2N06L
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20K) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Above TC = 25oC, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
RFL2N06L
50
60
2
10
±10
8.33
0.0667
-55 to 150
300
UNITS
V
V
A
A
V
W
W/oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Voltage (Note 2)
Drain to Source On Resistance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
BVDSS
VGS(TH)
IDSS
IGSS
VDS(ON)
rDS(ON)
td(ON)
tr
td(OFF)
tf
CISS
COSS
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA, (Figure 8)
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
VGS = ±10V, VDS = 0V
ID = 2A, VGS = 5V
ID =2A, VGS = 5V, (Figures 6, 7)
ID = 2A, VDD = 30V, RG = 6.25Ω, RL = 30
VGS = 5V, (Figures 10, 11, 12)
VGS = 0V, VDS = 25V, f = 1MHz, (Figure 9)
60
1
-
-
-
-
-
-
-
-
-
-
--V
-2V
- 1 µA
- 25 µA
- ±100 nA
- 1.9 V
- 0.950
10 20
ns
65 130 ns
20 40
ns
30 60
ns
- 225 pF
- 100 pF
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
CRSS
RθJC
- - 40 pF
- - 15 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 2A
Diode Reverse Recovery Time
trr ISD = 2A, dISD/dt = 100A/µs
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
- - 1.4 V
- 150 -
ns
2



Intersil Corporation RFL2N06L
RFL2N06L
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
2.5
2.0
1.5
1.0
0.5
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
OPERATION IN THIS AREA
LIMITED BY rDS(ON)
1
TJ
TC
=
=
MAX RATED
25oC
0.10
0.01
1
10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
1000
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
12
PULSE DURATION = 80µs
TC = 25oC
10
VGS = 10V
VGS = 7.5V
8
6 VGS = 5V
4 4.5V
4V
2
3.5V
3V
2.5V
0 2V
0 1 2 3 4 5 67
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. SATURATION CHARACTERISTICS
8
VDS = 10V
7 PULSE DURATION = 80µs
DUTY CYCLE 2%
6
5
TC = -40oC
4
3
TC = 25oC
TC = 125oC
2
TC = 125oC
1
0
12
TC = -40oC
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
6
FIGURE 5. TRANSFER CHARACTERISTICS
1.6
VGS = 5V
1.4 PULSE DURATION = 80µs
1.2
TC = 125oC
1.0
0.8
0.6 TC = 25oC
0.4 TC = -40oC
0.2
0
0246
ID, DRAIN CURRENT (A)
8
10
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
3







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