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RF1S630SM

Intersil Corporation
Part Number RF1S630SM
Manufacturer Intersil Corporation
Description 9A/ 200V/ 0.400 Ohm/ N-Channel Power MOSFETs
Published Apr 16, 2005
Detailed Description IRF630, RF1S630SM Data Sheet June 1999 File Number 1578.2 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Chan...
Datasheet PDF File RF1S630SM PDF File

RF1S630SM
RF1S630SM

Overview
IRF630, RF1S630SM Data Sheet June 1999 File Number 1578.
2 9A, 200V, 0.
400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA17412.
Features • 9A, 200V ...


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