IRF9630, RF1S9630SM
Data Sheet July 1999 File Number
2224.3
6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs
These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power M...
