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PBF259S Datasheet, Equivalent, Voltage Transistors.High Voltage Transistors High Voltage Transistors |
| Part | PBF259S |
|---|---|
| Description | High Voltage Transistors |
| Feature | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PBF259/D High Voltage Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER PBF259 PBF259S MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg PBF259,S 300 300 5.0 500 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc Watts mW/°C Watts mW/°C °C 1 2 3 CASE . |
| Manufacture | Motorola Inc |
| Datasheet |
| Part | PBF259S |
|---|---|
| Description | High Voltage Transistors |
| Feature | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PBF259/D High Voltage Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER PBF259 PBF259S MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg PBF259,S 300 300 5.0 500 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc Watts mW/°C Watts mW/°C °C 1 2 3 CASE . |
| Manufacture | Motorola Inc |
| Datasheet |
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