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PBF493 Datasheet, Equivalent, Voltage Transistors.High Voltage Transistors High Voltage Transistors |
| Part | PBF493 |
|---|---|
| Description | High Voltage Transistors |
| Feature | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PBF493/D High Voltage Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER PBF493 PBF493S MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value –300 –300 –5.0 –500 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C 1 2 3 CASE 29. |
| Manufacture | Motorola Inc |
| Datasheet |
| Part | PBF493 |
|---|---|
| Description | High Voltage Transistors |
| Feature | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PBF493/D High Voltage Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER PBF493 PBF493S MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value –300 –300 –5.0 –500 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C 1 2 3 CASE 29. |
| Manufacture | Motorola Inc |
| Datasheet |
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