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Voltage Transistors. PBF493 Datasheet

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Voltage Transistors. PBF493 Datasheet






PBF493 Transistors. Datasheet pdf. Equivalent




PBF493 Transistors. Datasheet pdf. Equivalent





Part

PBF493

Description

High Voltage Transistors



Feature


MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PBF493/D High V oltage Transistors PNP Silicon COLLECTO R 3 2 BASE 1 EMITTER PBF493 PBF493S M AXIMUM RATINGS Rating Collector – Emi tter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Cur rent — Continuous Total Device Dissip ation @ TA = 25°C Derate above 25°C T otal Device Dissipation @ TC.
Manufacture

Motorola Inc

Datasheet
Download PBF493 Datasheet


Motorola  Inc PBF493

PBF493; = 25°C Derate above 25°C Operating an d Storage Junction Temperature Range Sy mbol VCEO VCBO VEBO IC PD PD TJ, Tstg V alue –300 –300 –5.0 –500 625 5. 0 1.5 12 – 55 to +150 Unit Vdc Vdc Vd c mAdc mW mW/°C Watts mW/°C °C 1 2 3 CASE 29–04, STYLE 1 TO–92 (TO– 226AA) THERMAL CHARACTERISTICS Charact eristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction t.


Motorola  Inc PBF493

o Case Symbol RqJA RqJC Max 200 83.3 Uni t °C/W °C/W ELECTRICAL CHARACTERISTI CS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (1) (IC = –1.0 mAdc , IB = 0) Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitt er – Base Breakdown Voltage (IE = – 100 mAdc, IC = 0) Collector Cutof.


Motorola  Inc PBF493

f Current (VCB = –200 Vdc, IE = 0) Emi tter Cutoff Current (VEB = –3.0 Vdc) Collector Cutoff Current (VCE = –10 V dc) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO ICEO –30 0 –300 –5.0 — — — — — — –0.25 –20 –250 Vdc Vdc Vdc µAdc nAdc nAdc v 300 ms; Duty Cycle v 2.0% . Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 .

Part

PBF493

Description

High Voltage Transistors



Feature


MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PBF493/D High V oltage Transistors PNP Silicon COLLECTO R 3 2 BASE 1 EMITTER PBF493 PBF493S M AXIMUM RATINGS Rating Collector – Emi tter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Cur rent — Continuous Total Device Dissip ation @ TA = 25°C Derate above 25°C T otal Device Dissipation @ TC.
Manufacture

Motorola Inc

Datasheet
Download PBF493 Datasheet




 PBF493
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by PBF493/D
High Voltage Transistors
PNP Silicon
COLLECTOR
3
2
BASE
PBF493
PBF493S
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
–300
–300
–5.0
–500
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watts
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (1)
(IC = –1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –200 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = –3.0 Vdc)
Collector Cutoff Current
(VCE = –10 Vdc)
v v1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Symbol
Min
Max
Unit
V(BR)CEO –300
V(BR)CBO –300
V(BR)EBO –5.0
ICBO
IEBO
ICEO
–0.25
–20
–250
Vdc
Vdc
Vdc
µAdc
nAdc
nAdc
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1




 PBF493
PBF493 PBF493S
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –0.1 mAdc, VCE = –1.0 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –30 mAdc, VCE = –10 Vdc)
Collector – Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc)
Base – Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
PBF493S
All Types
All Types
hFE
VCE(sat)
VBE(sat)
40
40
25
–0.5 Vdc
–0.9 Vdc
Current – Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –20 Vdc, f = 20 MHz)
Output Capacitance
(VCB = –20 Vdc, IE = 0, f = 1.0 MHz)
fT 50 — MHz
Cobo — 6.0 pF
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data




 PBF493
150
100
70
50
30
20
15
–1.0
TJ = +125°C
+25°C
–55°C
PBF493 PBF493S
VCE = –10 Vdc
–2.0 –3.0
–5.0 –7.0
–10
–20 –30 –50 –80 –100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
100
50
Cib
20
10
5.0
2.0
1.0
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20
Ccb
–50 –100–200 –500 –1000
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Capacitances
–1.0
–0.8
VBE @ VCE = –10 V
–0.6
–0.4
–0.2 VCE(sat) @ IC/IB = 10 mA
0
–1.0 –2.0
–5.0 –10
–20
–50 –100
IC, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
100
80 TJ = 25°C
VCE = –20 Vdc
60
40
30
20
0
–1.0 –2.0
–5.0 –10 –20
–50 –100
IC, COLLECTOR CURRENT (mA)
Figure 3. Current–Gain — Bandwidth Product
–500
100 µs
1.0 ms
–200 1.0 s
–100
–50
1.5 WATT THERMAL
LIMITATION @ TC = 25°C
625 mW THERMAL
–20 LIMITATION @ TA = 25°C
PBF493S
PBF493
–10
–5.0
–3.0
BONDING WIRE LIMITATION
SECOND BREAKDOWN
LIMITATION TJ = 150°C
–5.0 –10
–20 –30 –50
–100 –200 –300
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region — Safe Operating Area
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3






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