PBF493 Transistors Datasheet pdf - Voltage Transistors. Equivalent, Catalog

Part	PBF493
Description	High Voltage Transistors
Feature	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PBF493/D High V oltage Transistors PNP Silicon COLLECTO R 3 2 BASE 1 EMITTER PBF493 PBF493S M AXIMUM RATINGS Rating Collector – Emi tter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Cur rent — Continuous Total Device Dissip ation @ TA = 25°C Derate above 25°C T otal Device Dissipation @ TC.
Manufacture	Motorola Inc
Datasheet	Download PBF493 Datasheet

PBF493; = 25°C Derate above 25°C Operating an d Storage Junction Temperature Range Sy mbol VCEO VCBO VEBO IC PD PD TJ, Tstg V alue –300 –300 –5.0 –500 625 5. 0 1.5 12 – 55 to +150 Unit Vdc Vdc Vd c mAdc mW mW/°C Watts mW/°C °C 1 2 3 CASE 29–04, STYLE 1 TO–92 (TO– 226AA) THERMAL CHARACTERISTICS Charact eristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction t.

o Case Symbol RqJA RqJC Max 200 83.3 Uni t °C/W °C/W ELECTRICAL CHARACTERISTI CS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (1) (IC = –1.0 mAdc , IB = 0) Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitt er – Base Breakdown Voltage (IE = – 100 mAdc, IC = 0) Collector Cutof.

f Current (VCB = –200 Vdc, IE = 0) Emi tter Cutoff Current (VEB = –3.0 Vdc) Collector Cutoff Current (VCE = –10 V dc) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO ICEO –30 0 –300 –5.0 — — — — — — –0.25 –20 –250 Vdc Vdc Vdc µAdc nAdc nAdc v 300 ms; Duty Cycle v 2.0% . Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 .

Part	PBF493
Description	High Voltage Transistors
Feature	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PBF493/D High V oltage Transistors PNP Silicon COLLECTO R 3 2 BASE 1 EMITTER PBF493 PBF493S M AXIMUM RATINGS Rating Collector – Emi tter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Cur rent — Continuous Total Device Dissip ation @ TA = 25°C Derate above 25°C T otal Device Dissipation @ TC.
Manufacture	Motorola Inc
Datasheet	Download PBF493 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by PBF493/D

High Voltage Transistors

PNP Silicon

COLLECTOR

BASE

PBF493

PBF493S

EMITTER

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector – Emitter Voltage

Collector – Base Voltage

Emitter – Base Voltage

Collector Current — Continuous

Total Device Dissipation @ TA = 25°C

Derate above 25°C

VCEO

VCBO

VEBO

–300

–5.0

–500

625

5.0

Vdc

mAdc

mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°C

1.5 Watts

12 mW/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

200

Thermal Resistance, Junction to Case

RqJC

83.3

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

°C/W

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage (1)

(IC = –1.0 mAdc, IB = 0)

Collector – Base Breakdown Voltage

(IC = –10 mAdc, IE = 0)

Emitter – Base Breakdown Voltage

(IE = –100 mAdc, IC = 0)

Collector Cutoff Current

(VCB = –200 Vdc, IE = 0)

Emitter Cutoff Current

(VEB = –3.0 Vdc)

Collector Cutoff Current

(VCE = –10 Vdc)

v v1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

Symbol

Min

Max

Unit

V(BR)CEO –300

V(BR)CBO –300

V(BR)EBO –5.0

ICBO

—

IEBO

—

ICEO

—

–0.25

–20

–250

Vdc

µAdc

nAdc

©MMotootorroollaa,

Small–Signal

Inc. 1996

Transistors,

FETs

and

Diodes

Device

Data

PBF493 PBF493S

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(IC = –0.1 mAdc, VCE = –1.0 Vdc)

(IC = –1.0 mAdc, VCE = –10 Vdc)

(IC = –30 mAdc, VCE = –10 Vdc)

Collector – Emitter Saturation Voltage

(IC = –20 mAdc, IB = –2.0 mAdc)

Base – Emitter Saturation Voltage

(IC = –20 mAdc, IB = –2.0 mAdc)

SMALL– SIGNAL CHARACTERISTICS

PBF493S

All Types

hFE

VCE(sat)

VBE(sat)

—

–0.5 Vdc

–0.9 Vdc

Current – Gain — Bandwidth Product

(IC = –10 mAdc, VCE = –20 Vdc, f = 20 MHz)

Output Capacitance

(VCB = –20 Vdc, IE = 0, f = 1.0 MHz)

fT 50 — MHz

Cobo — 6.0 pF

2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

150

100

–1.0

TJ = +125°C

+25°C

–55°C

PBF493 PBF493S

VCE = –10 Vdc

–2.0 –3.0

–5.0 –7.0

–10

–20 –30 –50 –80 –100

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

100

Cib

5.0

2.0

1.0

–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20

Ccb

–50 –100–200 –500 –1000

VR, REVERSE VOLTAGE (VOLTS)

Figure 2. Capacitances

–1.0

–0.8

VBE @ VCE = –10 V

–0.6

–0.4

–0.2 VCE(sat) @ IC/IB = 10 mA

–1.0 –2.0

–5.0 –10

–20

–50 –100

IC, COLLECTOR CURRENT (mA)

Figure 4. “On” Voltages

100

80 TJ = 25°C

VCE = –20 Vdc

–1.0 –2.0

–5.0 –10 –20

–50 –100

IC, COLLECTOR CURRENT (mA)

Figure 3. Current–Gain — Bandwidth Product

–500

100 µs

1.0 ms

–200 1.0 s

–100

–50

1.5 WATT THERMAL

LIMITATION @ TC = 25°C

625 mW THERMAL

–20 LIMITATION @ TA = 25°C

PBF493S

PBF493

–10

–5.0

–3.0

BONDING WIRE LIMITATION

SECOND BREAKDOWN

LIMITATION TJ = 150°C

–5.0 –10

–20 –30 –50

–100 –200 –300

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 5. Active Region — Safe Operating Area

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Voltage Transistors. PBF493 Datasheet

Voltage Transistors. PBF493 Datasheet

PBF493 Transistors. Datasheet pdf. Equivalent

PBF493 Transistors. Datasheet pdf. Equivalent

PBF493

High Voltage Transistors

Motorola Inc

PBF493

High Voltage Transistors

Motorola Inc