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RA07N4047M-E01

Mitsubishi Electric Semiconductor
Part Number RA07N4047M-E01
Manufacturer Mitsubishi Electric Semiconductor
Description MITSUBISHI RF MOSFET MODULE
Published Apr 16, 2005
Detailed Description MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECA UTIONS RA07N4047M 400-470MHz 7.5W 9.6...
Datasheet PDF File RA07N4047M-E01 PDF File

RA07N4047M-E01
RA07N4047M-E01


Overview
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECA UTIONS RA07N4047M 400-470MHz 7.
5W 9.
6V PORTABLE RADIO BLOCK DIAGRAM 2 3 DESCRIPTION The RA07N4047M is a 7.
5-watt RF MOSFET Amplifier Module for 9.
6-volt portable radios that operate in the 400- to 470-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.
Without the gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB.
The output power and drain current increase as the gate voltage increases.
With a gate voltage around 2.
5V (minimum), output power and drain current increases substantially.
T...



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