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RD60HUF1

Part Number	RD60HUF1
Manufacturer	Mitsubishi Electric Semiconductor
Description	RF POWER MOSFET
Published	Apr 16, 2005
Detailed Description	MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD60HUF1 25.0+/-0.3 7.0+/-0.5 1...
Datasheet	RD60HUF1 PDF File

Overview

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD60HUF1 25.
0+/-0.
3 7.
0+/-0.
5 11.
0+/-0.
3 Silicon MOSFET Power Transistor 520MHz,60W DESCRIPTION RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.
OUTLINE DRAWING 1 24.
0+/-0.
6 4-C2 •High power and High Gain: Pout>60W, Gp>7.
7dB @Vdd=12.
5V,f=520MHz •High Efficiency: 55%typ.
on UHF Band 2 3 10.
0+/-0.
3 FEATURES R1.
6+/-0.
15 0.
1 -0.
01 +0.
05 APPLICATION For output stage of high power amplifiers in UHF Band mobile radio sets.
5.
0+/-0.
3 4.
5+/-0.
7 6.
2+/-0.
7 18.
0+/-0.
3 3.
3+/-0.
2 PIN 1.
Drain 2.
Source 3.
Gate UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25°C...

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RD60HUF1 RF POWER MOSFET - Mitsubishi Electric Semiconductor

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