WEDPNF8M721V-1010BI Package Datasheet

WEDPNF8M721V-1010BI Datasheet, PDF, Equivalent


Part Number

WEDPNF8M721V-1010BI

Description

8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package

Manufacture

ETC

Total Page 30 Pages
Datasheet
Download WEDPNF8M721V-1010BI Datasheet


WEDPNF8M721V-1010BI
White Electronic Designs WEDPNF8M721V-XBX
8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module
Multi-Chip Package ADVANCED*
FEATURES
n Sector Architecture
n Package:
• 275 Plastic Ball Grid Array (PBGA), 32mm x 25mm
n Commercial, Industrial and Military Temperature Ranges
n Weight:
• WEDPNF8M721V-XBX - 2.5 grams typical
• One 16KByte, two 8KBytes, one 32KByte, and fif
teen 64KBytes in byte mode
• One 8K word, two 4K words, one 16K word, and
fifteen 32K word sectors in word mode.
• Any combination of sectors can be concurrently
erased. Also supports full chip erase
SDRAM PERFORMANCE FEATURES
n Organized as 8M x 72
n High Frequency = 100, 125MHz
n Single 3.3V ±0.3V power supply
n Fully Synchronous; all signals registered on positive
edge of system clock cycle
n Boot Code Sector Architecture (Bottom)
n Embedded Erase and Program Algorithms
n Erase Suspend/Resume
• Supports reading data from or programing data to a
sector not being erased
BENEFITS
n Internal pipelined operation; column address can be
changed every clock cycle
n Internal banks for hiding row access/precharge
n Programmable Burst length 1,2,4,8 or full page
n 4096 refresh cycles
FLASH PERFORMANCE FEATURES
n User Configurable as 1Mx8 or 512Kx16
n Access Times of 100, 120, 150ns
n 3.3 Volt for Read and Write Operations
n 1,000,000 Erase/Program Cycles
n 42% SPACE SAVINGS
n Reduced part count
n Reduced I/O count
• 14% I/O Reduction
n Suitable for hi-reliability applications
n SDRAM Upgradeable to 16M x 72 density (contact
factory for information)
n Flash upgradeable to 2M x 8 (or 1M x 16 or 512K x 32)
density
* This data sheet describes a product that may or may not be under
development and is subject to change or cancellation without notice.
September 2002 Rev. 3
1 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

WEDPNF8M721V-1010BI
White Electronic Designs WEDPNF8M721V-XBX
FIG. 1 PIN CONFIGURATION
TOP VIEW
NOTES:
1. DNU = Do Not Use
2. FD16-31, BYTE2, RY/BY2 are NC in this part, and used for flash upgraded to WEDPN8M722V-XBX (2x8M Flash).
White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520
2


Features White Electronic Designs WEDPNF8M721V-X BX 8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package ADVANCE D* FEATURES n n n Package: • 275 Plas tic Ball Grid Array (PBGA), 32mm x 25mm Commercial, Industrial and Military Te mperature Ranges Weight: • WEDPNF8M72 1V-XBX - 2.5 grams typical n n n n Sect or Architecture • One 16KByte, two 8K Bytes, one 32KByte, and fif teen 64KByt es in byte mode • One 8K word, two 4K words, one 16K word, and fifteen 32K w ord sectors in word mode. • Any combi nation of sectors can be concurrently e rased. Also supports full chip erase Bo ot Code Sector Architecture (Bottom) Em bedded Erase and Program Algorithms Era se Suspend/Resume • Supports reading data from or programing data to a secto r not being erased SDRAM PERFORMANCE F EATURES n n n n n n n n Organized as 8M x 72 High Frequency = 100, 125MHz Sing le 3.3V ±0.3V power supply Fully Synch ronous; all signals registered on posit ive edge of system clock cycle Internal pipelined operation; column address .
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