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ZVN0117TA

Part Number	ZVN0117TA
Manufacturer	ETC
Description	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Published	Apr 17, 2005
Detailed Description	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 1 APRIL 94 FEATURES * 170 Volt BVDS APPLICATIONS * Telephone handse...
Datasheet	ZVN0117TA PDF File

Overview

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 1 APRIL 94 FEATURES * 170 Volt BVDS APPLICATIONS * Telephone handsets ZVN0117TA D G S ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg E-Line TO92 Compatible VALUE 170 160 2 ± 20 UNIT V mA A V mW °C 700 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN.
BVDSS IGSS IDSS ID(on) RDS(on) 100 23 23 170 100 10 50 MAX.
UNIT CONDITIONS.
V nA µA µA Drain-Source Breakdown Voltage Gate-Body Leakage Ze...

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ZVN0117TA N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET - ETC

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