N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Description
D
P-Pack
G S
APL1001P
1000V 18.0A 0.60W HERMETIC PACKAGE
POWER MOS IV ®
MAXIMUM RATINGS
Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temp...
