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M5M5256DP-70LL-I Datasheet, Equivalent, STATIC RAM.

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

 

 

 

Part M5M5256DP-70LL-I
Description 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
Feature '97.
4.
7 MITSUBISHI LSIs M5M5256DP,KP,F P,VP,RV -45LL-I,-55LL-I,-70LL-I, -45XL- I,-55XL-I,-70XL-I 262144-BIT (32768-WOR D BY 8-BIT) CMOS STATIC RAM DESCRIPTIO N The M5M5256DP,KP,FP,VP,RV is 262,144- bit CMOS static RAMs organized as 32,76 8-words by 8-bits which is fabricated u sing high-performance 3 polysilicon CMO S technology.
The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM.
Stand-by current is small enough f or battery back-up application.
It is i deal for the memory systems which requi re simple interface.
Especially the M5M 5256DVP,RV are .
Manufacture Mitsubishi
Datasheet
Download M5M5256DP-70LL-I Datasheet
Part M5M5256DP-70LL-I
Description 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
Feature '97.
4.
7 MITSUBISHI LSIs M5M5256DP,KP,F P,VP,RV -45LL-I,-55LL-I,-70LL-I, -45XL- I,-55XL-I,-70XL-I 262144-BIT (32768-WOR D BY 8-BIT) CMOS STATIC RAM DESCRIPTIO N The M5M5256DP,KP,FP,VP,RV is 262,144- bit CMOS static RAMs organized as 32,76 8-words by 8-bits which is fabricated u sing high-performance 3 polysilicon CMO S technology.
The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM.
Stand-by current is small enough f or battery back-up application.
It is i deal for the memory systems which requi re simple interface.
Especially the M5M 5256DVP,RV are .
Manufacture Mitsubishi
Datasheet
Download M5M5256DP-70LL-I Datasheet

M5M5256DP-70LL-I

M5M5256DP-70LL-I
M5M5256DP-70LL-I

M5M5256DP-70LL-I

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