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PHB4N60E

NXP
Part Number PHB4N60E
Manufacturer NXP
Description PowerMOS transistors Avalanche energy rated
Published Mar 22, 2005
Detailed Description Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanc...
Datasheet PDF File PHB4N60E PDF File

PHB4N60E
PHB4N60E

Overview
Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP4N60E, PHB4N60E SYMBOL d QUICK REFERENCE DATA VDSS = 600 V g ID = 4.
5 A RDS(ON) ≤ 2.
5 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.
V.
and computer monitor power supplies, d.
c.
to d.
c.
converters, motor control circuits and general purpose switching applications.
The PHP4N60E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB4N60E...


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