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PHB8ND50E

NXP
Part Number PHB8ND50E
Manufacturer NXP
Description Transistors
Published Mar 22, 2005
Detailed Description Philips Semiconductors Product specification PowerMOS transistors PHP8ND50E, PHB8ND50E, PHW8ND50E FREDFET, Avalanche e...
Datasheet PDF File PHB8ND50E PDF File

PHB8ND50E
PHB8ND50E

Overview
Philips Semiconductors Product specification PowerMOS transistors PHP8ND50E, PHB8ND50E, PHW8ND50E FREDFET, Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance • Fast reverse recovery diode SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 8.
5 A g RDS(ON) ≤ 0.
85 Ω s trr = 180 ns GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED).
This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts and ...


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