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PHB9N60E

NXP
Part Number PHB9N60E
Manufacturer NXP
Description Transistor
Published Mar 22, 2005
Detailed Description Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanc...
Datasheet PDF File PHB9N60E PDF File

PHB9N60E
PHB9N60E

Overview
Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHB9N60E, PHW9N60E SYMBOL d QUICK REFERENCE DATA VDSS = 600 V g ID = 8.
7 A RDS(ON) ≤ 0.
8 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.
V.
and computer monitor power supplies, d.
c.
to d.
c.
converters, motor control circuits and general purpose switching applications.
The PHW9N60E is supplied in the SOT429 (TO247) conventional leaded package.
The PHB9N60E ...


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