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PHD24N03

NXP

Transistor


Description
Philips Semiconductors Preliminary specification TrenchMOS transistor Logic level FET FEATURES ’Trench’ technology Very low on-state resistance Fast switching Stable off-state characteristics High thermal cycling performance Low thermal resistance PHD24N03LT SYMBOL d QUICK REFERENCE DATA VDSS = 30 V ID = 24 A g RDS(ON) ≤ 56 mΩ (VGS = 5 V) ...



NXP

PHD24N03

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