Triac. MAC218-4FP Datasheet

MAC218-4FP Triac. Datasheet pdf. Equivalent


Motorola MAC218-4FP
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MAC218FP/D
Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies.
Blocking Voltage to 800 Volts
Glass Passivated Junctions for Greater Parameter Uniformity and Stability
Isolated TO-220 Type Package for Ease of Mounting
Gate Triggering in Three Modes (MAC218FP Series) or
Four Modes (MAC218AFP Series)
MAC218FP
Series
MAC218AFP
Series
ISOLATED TRIACs
THYRISTORS
8 AMPERES RMS
200 thru 800 VOLTS
MT2 MT1
G
CASE 221C-02
STYLE 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Off-State Voltage(1) (TJ = –40 to +125°C)
(1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC218-4FP, MAC218A4FP
MAC218-6FP, MAC218A6FP
MAC218-8FP, MAC218A8FP
MAC218-10FP, MAC218A10FP
Symbol
VDRM
Value
200
400
600
800
Unit
Volts
On-State RMS Current (TC = +80°C) Full Cycle Sine Wave 50 to 60 Hz(2)
Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz,
preceded and followed by rated current, TC = 80°C)
Circuit Fusing (t = 8.3 ms)
IT(RMS)
ITSM
I2t
8
100
40
Amps
Amps
A2s
Peak Gate Power (TC = +80°C, Pulse Width = 2 µs)
Average Gate Power (TC = +80°C, t = 8.3 ms)
Peak Gate Current (Pulse Width = 1 µs)
pRMS Isolation Voltage (TA = 25°C, Relative Humidity 20%)
Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
PGM
PG(AV)
IGM
V(ISO)
TJ
Tstg
16
0.35
4
1500
–40 to +125
–40 to +150
Watts
Watt
Amps
Volts
°C
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC 2.2 °C/W
Thermal Resistance, Case to Sink
RθCS
2.2 (typ)
°C/W
Thermal Resistance, Junction to Ambient
RθJA 60 °C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic
body.
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1


MAC218-4FP Datasheet
Recommendation MAC218-4FP Datasheet
Part MAC218-4FP
Description Triac
Feature MAC218-4FP; MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MAC218FP/D Triacs • • • • MAC218FP .
Manufacture Motorola
Datasheet
Download MAC218-4FP Datasheet




Motorola MAC218-4FP
MAC218FP Series MAC218AFP Series
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Peak Off-State Current (Either Direction)
(VD = Rated VDRM @ TJ = 125°C, Gate Open )
Peak On-State Voltage (Either Direction)
t(ITM = 11.3 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle 2%)
Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 12 )
Trigger Mode
MT2(+), G(+) ;
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
(Main Terminal Voltage = Rated VDRM, RL = 10 k, TJ = +125°C)
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
Holding Current (Either Direction)
(VD = 24 Vdc, Gate Open, Initiating Current = 200 mA)
Critical Rate of Rise of Commutating Off-State Voltage
(VD = Rated VDRM, ITM = 11.3 A, Commutating
di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C)
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Voltage Rise, Gate Open,
TJ = 125°C)
Symbol
IDRM
VTM
IGT
VGT
IH
dv/dt(c)
dv/dt
Min Typ Max Unit
——
2 mA
— 1.7
2 Volts
mA
— — 50
— — 50
— — 50
— — 75
Volts
— 0.9
2
— 0.9
2
— 1.1
2
— 1.4 2.5
0.2 —
0.2 —
— — 50 mA
— 5 — V/µs
— 100 — V/µs
125
115
105
95
85
75
012345678
IT(RMS), RMS ON-STATE CURRENT (AMPS)
Figure 1. Current Derating
10
8
6
4
2
0
012345678
IT(RMS), RMS ON-STATE CURRENT (AMPS)
Figure 2. Power Dissipation
2 Motorola Thyristor Device Data



Motorola MAC218-4FP
MAC218FP Series MAC218AFP Series
TYPICAL CHARACTERISTICS
5 1.8
OFF-STATE VOLTAGE = 12 V
OFF-STATE VOLTAGE = 12 V
1.6
3
1.4
2 1.2 QUADRANT 4
11
2
0.7 QUADRANT 3
4
0.5
–60 –40 –20
0
20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Normalized Gate Trigger Current
1
0.8 1
0.6 QUADRANTS 2
3
0.4
–60 –40 –20 0
20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Normalized Gate Trigger Voltage
2
GATE OPEN
MAIN TERMINAL #1
POSITIVE
1
0.7
0.5
MAIN TERMINAL #2
POSITIVE
0.3
0.2
–60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Normalized Holding Current
Motorola Thyristor Device Data
3







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)