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Triac. MAC218A10FP Datasheet |
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![]() MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MAC218FP/D
Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies.
• Blocking Voltage to 800 Volts
• Glass Passivated Junctions for Greater Parameter Uniformity and Stability
• Isolated TO-220 Type Package for Ease of Mounting
• Gate Triggering in Three Modes (MAC218FP Series) or
Four Modes (MAC218AFP Series)
MAC218FP
Series
MAC218AFP
Series
ISOLATED TRIACs
THYRISTORS
8 AMPERES RMS
200 thru 800 VOLTS
MT2 MT1
G
CASE 221C-02
STYLE 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Off-State Voltage(1) (TJ = –40 to +125°C)
(1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC218-4FP, MAC218A4FP
MAC218-6FP, MAC218A6FP
MAC218-8FP, MAC218A8FP
MAC218-10FP, MAC218A10FP
Symbol
VDRM
Value
200
400
600
800
Unit
Volts
On-State RMS Current (TC = +80°C) Full Cycle Sine Wave 50 to 60 Hz(2)
Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz,
preceded and followed by rated current, TC = 80°C)
Circuit Fusing (t = 8.3 ms)
IT(RMS)
ITSM
I2t
8
100
40
Amps
Amps
A2s
Peak Gate Power (TC = +80°C, Pulse Width = 2 µs)
Average Gate Power (TC = +80°C, t = 8.3 ms)
Peak Gate Current (Pulse Width = 1 µs)
pRMS Isolation Voltage (TA = 25°C, Relative Humidity 20%)
Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
PGM
PG(AV)
IGM
V(ISO)
TJ
Tstg
16
0.35
4
1500
–40 to +125
–40 to +150
Watts
Watt
Amps
Volts
°C
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC 2.2 °C/W
Thermal Resistance, Case to Sink
RθCS
2.2 (typ)
°C/W
Thermal Resistance, Junction to Ambient
RθJA 60 °C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic
body.
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1
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![]() MAC218FP Series MAC218AFP Series
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Peak Off-State Current (Either Direction)
(VD = Rated VDRM @ TJ = 125°C, Gate Open )
Peak On-State Voltage (Either Direction)
t(ITM = 11.3 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle 2%)
Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 12 Ω)
Trigger Mode
MT2(+), G(+) ;
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
(Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +125°C)
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
Holding Current (Either Direction)
(VD = 24 Vdc, Gate Open, Initiating Current = 200 mA)
Critical Rate of Rise of Commutating Off-State Voltage
(VD = Rated VDRM, ITM = 11.3 A, Commutating
di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C)
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Voltage Rise, Gate Open,
TJ = 125°C)
Symbol
IDRM
VTM
IGT
VGT
IH
dv/dt(c)
dv/dt
Min Typ Max Unit
——
2 mA
— 1.7
2 Volts
mA
— — 50
— — 50
— — 50
— — 75
Volts
— 0.9
2
— 0.9
2
— 1.1
2
— 1.4 2.5
0.2 —
0.2 —
—
—
— — 50 mA
— 5 — V/µs
— 100 — V/µs
125
115
105
95
85
75
012345678
IT(RMS), RMS ON-STATE CURRENT (AMPS)
Figure 1. Current Derating
10
8
6
4
2
0
012345678
IT(RMS), RMS ON-STATE CURRENT (AMPS)
Figure 2. Power Dissipation
2 Motorola Thyristor Device Data
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![]() MAC218FP Series MAC218AFP Series
TYPICAL CHARACTERISTICS
5 1.8
OFF-STATE VOLTAGE = 12 V
OFF-STATE VOLTAGE = 12 V
1.6
3
1.4
2 1.2 QUADRANT 4
11
2
0.7 QUADRANT 3
4
0.5
–60 –40 –20
0
20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Normalized Gate Trigger Current
1
0.8 1
0.6 QUADRANTS 2
3
0.4
–60 –40 –20 0
20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Normalized Gate Trigger Voltage
2
GATE OPEN
MAIN TERMINAL #1
POSITIVE
1
0.7
0.5
MAIN TERMINAL #2
POSITIVE
0.3
0.2
–60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Normalized Holding Current
Motorola Thyristor Device Data
3
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