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PHD5N20E

NXP

PowerMOS transistor


Description
Philips Semiconductors Product specification PowerMOS transistor PHD5N20E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Int...



NXP

PHD5N20E

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