DatasheetsPDF.com

MGW12N120D

Part Number	MGW12N120D
Manufacturer	ON
Description	Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Published	Apr 27, 2005
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW12N120D/D ™ Data Sheet Insulated Gate Bipolar Transis...
Datasheet	MGW12N120D PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW12N120D/D ™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW12N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability.
Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives.
Fast switching characteristics result in efficient operation at high frequencies.
Co–packaged IGBT...

Similar Datasheet

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)