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MGW20N120

Part Number	MGW20N120
Manufacturer	Motorola
Description	Insulated Gate Bipolar Transistor
Published	Apr 27, 2005
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW20N120/D Designer’s™ Data Sheet Insulated Gate Bipolar...
Datasheet	MGW20N120 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW20N120/D Designer’s™ Data Sheet Insulated Gate Bipolar Transistor N−Channel Enhancement−Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage−blocking capability.
Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time.
Fast switching characteristics result in efficient operation at high frequencies.
• Industry Standard High Power TO−247 Package with Isolated Mounting Hole • High Speed Eoff: 160 mJ/A typical at 125°C • High Short Circuit Capability − 10 ms minimum • Robu...

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