Semiconductor
MCTV35P60F1D
P-Type MOS Controlled with Anti-Parallel Diode
Package
JEDEC STYLE TO-247
April 1999
PROCE
S
AWN NS 35A, 600V ITHDR DESIG PART W E - NO NEW Thyristor (MCT) OLET S OBS
Features
35A, -600V VTM = -1.35V (Max) at I = 35A and +150oC 800A Surge Current Capability 800A/µs di/dt Capability MOS Insulated Gate Control 50A G...
