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MGFC38V6472

Mitsubishi
Part Number MGFC38V6472
Manufacturer Mitsubishi
Description C band internally matched power GaAs FET
Published Apr 29, 2005
Detailed Description < C band internally matched power GaAs FET > MGFC38V6472 6.4 – 7.2 GHz BAND / 6W 11.3 DESCRIPTION The MGFC38V6472 is a...
Datasheet PDF File MGFC38V6472 PDF File

MGFC38V6472
MGFC38V6472

Overview
< C band internally matched power GaAs FET > MGFC38V6472 6.
4 – 7.
2 GHz BAND / 6W 11.
3 DESCRIPTION The MGFC38V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.
4 – 7.
2 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=6W (TYP.
) @f=6.
4 – 7.
2GHz  High power gain GLP=9dB (TYP.
) @f=6.
4 – 7.
2GHz  High power added efficiency P.
A.
E.
=31% (TYP.
) @f=6.
4 – 7.
2GHz  Low distortion [ item -51] IM3=-45dBc (TYP.
) @Po=27dBm S.
C.
L.
APPLICATION  item 01 : 6.
4 – 7.
2 GHz band power amplifier  item 51 : 6.
4 – 7.
2 GHz band digital radio c...


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