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MGFC41V3642

Part Number	MGFC41V3642
Manufacturer	Mitsubishi
Description	C band internally matched power GaAs FET
Published	Apr 29, 2005
Detailed Description	< C band internally matched power GaAs FET > MGFC41V3642 3.6 – 4.2 GHz BAND / 14W DESCRIPTION The MGFC41V3642 is an inte...
Datasheet	MGFC41V3642 PDF File

Overview

< C band internally matched power GaAs FET > MGFC41V3642 3.
6 – 4.
2 GHz BAND / 14W DESCRIPTION The MGFC41V3642 is an internally impedance-matched GaAs power FET especially designed for use in 3.
6 – 4.
2 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=14W (TYP.
) @f=3.
6 – 4.
2GHz  High power gain GLP=12.
5dB (TYP.
) @f=3.
6 – 4.
2GHz  High power added efficiency P.
A.
E.
=40% (TYP.
) @f=3.
6 – 4.
2GHz  Low distortion [item -51] IM3=-45dBc (TYP.
) @Po=30dBm S.
C.
L APPLICATION  item 01 : 3.
6 – 4.
2 GHz band power amplifier  item 51 : 3.
6 – 4.
2 GHz band digital radio commu...

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MGFC41V3642 C band internally matched power GaAs FET - Mitsubishi

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