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MGFC4419G

Mitsubishi

InGaAs HEMT Chip

Description
MITSUBISHI SEMICONDUCTOR PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MGFC4419G InGaAs HEMT Chip OUTLINE DRAWING DESCRIPTION The MGFC4419G low-noise HEMT(High electron Mobility Transistor) is designed for use in X to K band amplifiers. FEATURES (TARGET) Low noise figure NFmin,=0.5 dB (MAX...

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