NAND gate. 74LVT20 Datasheet

74LVT20 gate. Datasheet pdf. Equivalent

74LVT20 Datasheet
Recommendation 74LVT20 Datasheet
Part 74LVT20
Description 3.3V Dual 4-input NAND gate
Feature 74LVT20; INTEGRATED CIRCUITS 74LVT20 3.3V Dual 4-input NAND gate Product specification IC24 Data Handbook 19.
Manufacture NXP
Datasheet
Download 74LVT20 Datasheet





NXP 74LVT20
INTEGRATED CIRCUITS
74LVT20
3.3V Dual 4-input NAND gate
Product specification
IC24 Data Handbook
1996 Aug 28
Philips
Semiconductors



NXP 74LVT20
Philips Semiconductors
3.3V Dual 4-input NAND gate
Product specification
74LVT20
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
Tamb = 25°C;
GND = 0V
Propagation
tPLH delay
CL = 50pF;
tPHL An, Bn, Cn, Dn VCC = 3.3V
to Yn
CIN
Input
capacitance
VI = 0V or 3.0V
ICCL
Total supply
current
Outputs Low;
VCC = 3.6V
TYPICAL UNIT
3.4
3.2
ns
3 pF
0.5 mA
PIN CONFIGURATION
A0 1
B0 2
NC 3
C0 4
D0 5
Y0 6
GND 7
14 VCC
13 D1
12 C1
11 NC
10 B1
9 A1
8 Y1
SA00350
PIN DESCRIPTION
PIN
NUMBER
SYMBOL
NAME AND FUNCTION
1, 2, 4, 5, 9,
10, 12, 13
An, Bn,
Cn, Dn
Data inputs
6, 8 Yn Data outputs
7 GND Ground (0V)
14 VCC Positive supply voltage
LOGIC SYMBOL
1 2 4 5 9 10 12 13
A0 B0 C0 D0 A1 B1 C1 D1
VCC = Pin 14
GND = Pin 7
Y0 Y1
68
SA00351
LOGIC DIAGRAM
A0
B0
C0
D0
1
2
4
5
VCC = Pin 14
GND = Pin 7
9
A1
10
B1
12
C1
13
D1
6
Y0
8
Y1
LOGIC SYMBOL (IEEE/IEC)
1&
2
4
5
6
SA00352
9
10
12
13
FUNCTION TABLE
INPUTS
Dna Dnb Dnc
LXX
XLX
XXL
XXX
HH
NOTES:
H = High voltage level
L = Low voltage level
X = Don’t care
H
8
SF00068
OUTPUT
Dnd Qn
XH
XH
XH
LH
HL
ORDERING INFORMATION
PACKAGES
14-Pin Plastic SO
14-Pin Plastic SSOP
14-Pin Plastic TSSOP
TEMPERATURE RANGE
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
OUTSIDE NORTH AMERICA
74LVT20 D
74LVT20 DB
74LVT20 PW
NORTH AMERICA
74LVT20 D
74LVT20 DB
74LVT20PW DH
DWG NUMBER
SOT108-1
SOT337-1
SOT402-1
1996 Aug 28
2 853-1871 17244



NXP 74LVT20
Philips Semiconductors
3.3V Dual 4-input NAND gate
Product specification
74LVT20
ABSOLUTE MAXIMUM RATINGS1, 2
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
VCC
IIK
VI
IOK
VOUT
IOUT
DC supply voltage
DC input diode current
DC input voltage3
DC output diode current
DC output voltage3
DC output current
VI < 0
VO < 0
Output in Off or High state
Output in High state
Output in Low state
–0.5 to +4.6
–50
–0.5 to +7.0
–50
–0.5 to +7.0
–32
64
V
mA
V
mA
V
mA
Tstg Storage temperature range
–65 to 150
°C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
VCC
VI
VIH
VIL
IOH
IOL
Tamb
DC supply voltage
Input voltage
High-level input voltage
Low-level Input voltage
High-level output current
Low-level output current
Low-level output current; current duty cycle 50%, f 1kHz
Operating free-air temperature range
LIMITS
MIN MAX
2.7 3.6
0 5.5
2.0
0.8
–20
32
48
–40 +85
UNIT
V
V
V
V
mA
mA
°C
1996 Aug 28
3





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