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M29W400T Datasheet, Equivalent, Flash Memory.

4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory

4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory

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Part M29W400T
Description 4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory
Feature M29W400T M29W400B 4 Mbit (512Kb x8 or 25 6Kb x16, Boot Block) Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W400T and M29W400B are replaced re spectively by the M29W400BT and M29W400 BB 2.
7V to 3.
6V SUPPLY VOLTAGE for PROG RAM, ERASE and READ OPERATIONS FAST ACC ESS TIME: 90ns FAST PROGRAMMING TIME โ€ “ 10ยตs by Byte / 16ยตs by Word typical PROGRAM/ERASE CONTROLLER (P/E.
C.
) โ€“ Program Byte-by-Byte or Word-by-Word โ€ “ Status Register bits and Ready/Busy O utput MEMORY BLOCKS โ€“ Boot Block (Top or Bottom location) โ€“ Parameter and Main blocks BLOCK, MULTI-BLOCK and CHIP ERASE MULTI BLOCK PROTECT .
Manufacture ST Microelectronics
Datasheet
Download M29W400T Datasheet
Part M29W400T
Description 4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory
Feature M29W400T M29W400B 4 Mbit (512Kb x8 or 25 6Kb x16, Boot Block) Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W400T and M29W400B are replaced re spectively by the M29W400BT and M29W400 BB 2.
7V to 3.
6V SUPPLY VOLTAGE for PROG RAM, ERASE and READ OPERATIONS FAST ACC ESS TIME: 90ns FAST PROGRAMMING TIME โ€ “ 10ยตs by Byte / 16ยตs by Word typical PROGRAM/ERASE CONTROLLER (P/E.
C.
) โ€“ Program Byte-by-Byte or Word-by-Word โ€ “ Status Register bits and Ready/Busy O utput MEMORY BLOCKS โ€“ Boot Block (Top or Bottom location) โ€“ Parameter and Main blocks BLOCK, MULTI-BLOCK and CHIP ERASE MULTI BLOCK PROTECT .
Manufacture ST Microelectronics
Datasheet
Download M29W400T Datasheet

M29W400T

M29W400T
M29W400T

M29W400T

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